Fig. 1. Structural schematic diagram of metamaterial terahertz wave absorbers: (a) Schematic diagram of multi-band absorber; (b) schematic diagram of broadband tunable absorber; (c) profile of absorber; (d) surface structure of absorber.超材料太赫兹波吸收器结构示意图　(a) 多频吸收器示意图; (b) 宽频可调谐吸收器示意图; (c) 吸收器剖面图; (d) 吸收器表面结构图

Fig. 2. Absorption spectrum of metamaterial terahertz multi-band absorber.超材料太赫兹多频吸收器的吸收谱

Fig. 3. Absorption spectra of metamaterial terahertz absorbers when silicon conductivity is 1 S/m.硅电导率为1 S/m时的超材料太赫兹波吸收器吸收谱

Fig. 4. Absorption spectra of terahertz absorbers with six different values of silicon conductivity in the range of 1−1000 S/m.硅电导率在1—1000 S/m范围内六种不同取值下的太赫兹波吸收器吸收谱

Fig. 5. Absorption spectra of metamaterial terahertz absorbers when silicon conductivity is 1600 S/m.硅电导率为1600 S/m时的超材料太赫兹波吸收器吸收谱

Fig. 6. Absorption spectra of terahertz absorbers with six different values of silicon conductivity in the range of 1000−4000 S/m.硅电导率在1000−4000 S/m范围内六种不同取值下的太赫兹波吸收器吸收谱

Fig. 7. Distribution of magnetic field at 2.918 THz in metamaterial structure layer of terahertz multi-band absorber.多频吸收器超材料结构层在2.918 THz处的磁场分布情况

Fig. 8. Terahertz tunable broadband absorber of surface current distribution on upper and lower surfaces at 0.78 THz when silicon conductivity is 1600 S/m: (a) Upper surface; (b) lower surface.宽频可调谐吸收器在硅电导率为1600 S/m时0.78 THz频率点的上下表面的表面电流分布情况　(a)上表面; (b)下表面