Fig. 1. Schematic diagram of the oxide VCSEL structure^[16]

Fig. 2. The effect of indium content on laser reliability^[19]

Fig. 3. Trace diagram of DLD in a failed VCSEL viewed from the top and side^[25]

Fig. 4. Cross-sectional TEM images of different oxide compositions^[24]. (a) Al_0.98Ga_0.02As oxide layer; (b) AlAs oxide layer

Fig. 5. Cross-sectional TEM images of an oxide VCSEL mesa^[29]

Fig. 6. TEM images showing a tracing of the dislocation network^[30]

Fig. 7. Cross-sectional SEM images. (a)Original design. (b) Oxide free design^[30]

Fig. 8. Plan view TEM of failed VCSEL introduced during manufacturing^[32]

Fig. 9. TEM micrographs of a device subjected to a reverse HBM event^[33]. (a) Plan-view; (b) cross-section

Fig. 10. TEM micrographs of a device subjected to a forward HBM event^[33]. (a) Plan-view; (b) cross-section

Fig. 11. TEM micrographs of a device subjected to an MM event^[33]. (a) Plan-view; (b) cross-section

Fig. 12. TEM micrographs of a device subjected to a CDM event^[33]. (a) Plan-view; (b) cross-section

Fig. 13. TEM micrographs of a device subjected to an EOS event. (a) Plan-view; (b) cross-section

Fig. 14. Preventive measures taken to prevent electrostatic discharge in VCSEL workshop^[30]

Fig. 15. VCSEL and Zener Diode package diagram

Fig. 16. Dislocation of oxide VCSEL under humidity corrosion^[54-56]. (a) PV-TEM; (b)XS-TEM

Fig. 17. Semiconductor crack of oxide VCSELs under humidity corrosion^[54-56]. (a) Case1; (b) Case2

Fig. 18. SEM of aperture surface degradation of oxide VCSEL after humidity corrosion^[54-56]

Fig. 19. Schematic diagram of VCSEL corrosion failure mechanism^[52]

Fig. 20. Coating epoxy resin to protect the VCSEL^[25]

Fig. 21. Example of DLD caused by scratch^[11]

Fig. 22. TEM images of Case 1. (a)Overall PV-TEM. (b)Partial enlargement in the (a) dotted box. (c)XS-TEM in the (b) dotted box

Fig. 23. TEM image of Case 2. (a)Overall PV-TEM. (b)Partial enlargement in the (a)dotted box. (c)XS-TEM

Fig. 24. PV-TEM images of Case 3