[1] [1] DONATO N, ROUGER N, PERNOT J, et al. Diamond power devices: state of the art, modelling, figures of merit and future perspective［J］. Journal of Physics D, 2020, 53: 093001.

[2] [2] ISBERG J, HAMMERSBERG J, JOHANSSON E, et al. High carrier mobility in single-crystal plasma-deposited diamond［J］. Science, 2002, 297(5587): 1670-1672.

[3] [3] TATSUMI N, TAMASAKU K, ITO T, et al. Behavior of crystal defects in synthetic type-Ⅱa single-crystalline diamond at high temperatures under normal pressure［J］. Journal of Crystal Growth, 2017, 458: 27-30.

[5] [5] TALLAIRE A, MILLE V, BRINZA O, et al. Thick CVD diamond films grown on high-quality type Ⅱa HPHT diamond substrates from New Diamond Technology［J］. Diamond and Related Materials, 2017, 77: 146-152.

[6] [6] LEW C T K, DONTSCHUK N, BROADWAY D A, et al. Investigation of charge carrier trapping in H-terminated diamond devices［J］. Applied Physics Letters, 2020, 117(14): 143507.

[7] [7] KLEIN O, MAYR M, FISCHER M, et al. Propagation and annihilation of threading dislocations during off-axis growth of heteroepitaxial diamond films［J］. Diamond and Related Materials, 2016, 65: 53-58.

[8] [8] SECROUN A, BRINZA O, TARDIEU A, et al. Dislocation imaging for electronics application crystal selection［J］. Physica Status Solidi (a), 2007, 204(12): 4298-4304.

[9] [9] BOUSSADI A, TALLAIRE A, KASU M, et al. Reduction of dislocation densities in single crystal CVD diamond by confinement in the lateral sector［J］. Diamond and Related Materials, 2018, 83: 162-169.

[10] [10] HAN X T, DUAN P, PENG Y, et al. Basal plane bending of homoepitaxial MPCVD single-crystal diamond［J］. Materials, 2020, 13(20): 4510.

[11] [11] TALLAIRE A, OUISSE T, LANTREIBECQ A, et al. Identification of dislocations in synthetic chemically vapor deposited diamond single crystals［J］. Crystal Growth & Design, 2016, 16(5): 2741-2746.

[12] [12] BOGDAN G, NESLDEK M, D'HAEN J, et al. Growth and characterization of near-atomically flat, thick homoepitaxial CVD diamond films［J］. Physica Status Solidi (a), 2005, 202(11): 2066-2072.

[14] [14] HEI L F, ZHAO Y, WEI J J, et al. Interface features of the HPHT Ⅰb substrate and homoepitaxial CVD diamond layer［J］. Diamond and Related Materials, 2016, 69: 33-39.

[15] [15] BURNS R C, CHUMAKOV A I, CONNELL S H, et al. HPHT growth and X-ray characterization of high-quality type Ⅱa diamond［J］. Journal of Physics Condensed Matter: an Institute of Physics Journal, 2009, 21(36): 364224.

[16] [16] TSUBOUCHI N, MOKUNO Y, YAMAGUCHI H, et al. Characterization of crystallinity of a large self-standing homoepitaxial diamond film［J］. Diamond and Related Materials, 2009, 18(2/3): 216-219.

[17] [17] SAKWE S A, MLLER R, WELLMANN P J. Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC［J］. Journal of Crystal Growth, 2006, 289(2): 520-526.

[18] [18] NAAMOUN M, TALLAIRE A, SILVA F, et al. Etch-pit formation mechanism induced on HPHT and CVD diamond single crystals by H2/O2 plasma etching treatment［J］. Physica Status Solidi (a), 2012, 209(9): 1715-1720.

[19] [19] ACHARD J, TALLAIRE A, MILLE V, et al. Improvement of dislocation density in thick CVD single crystal diamond films by coupling H2/O2 plasma etching and chemo-mechanical or ICP treatment of HPHT substrates［J］. Physica Status Solidi (a), 2014, 211(10): 2264-2267.

[20] [20] TSUBOUCHI N, MOKUNO Y, SHIKATA S. Characterizations of etch pits formed on single crystal diamond surface using oxygen/hydrogen plasma surface treatment［J］. Diamond and Related Materials, 2016, 63: 43-46.

[21] [21] TSUBOUCHI N, SHIKATA S I. Evaluation method for grown-in dislocations in CVD single crystal diamond using plasma surface treatment［J］. Japanese Journal of Applied Physics, 2014, 53(6): 068010.

[22] [22] ICHIKAWA K, KODAMA H, SUZUKI K, et al. Dislocation in heteroepitaxial diamond visualized by hydrogen plasma etching［J］. Thin Solid Films, 2016, 600: 142-145.

[24] [24] YUROV V, BUSHUEV E, BOLSHAKOV A, et al. Etching kinetics of (100) single crystal diamond surfaces in a hydrogen microwave plasma, studied with in situ low-coherence interferometry［J］. Physica Status Solidi (a), 2017, 214(11): 1700177.

[25] [25] YANG K C, XIA Y B, WANG L J, et al. Influence of intermittently etching on quality of CVD diamond thin films［J］. Transactions of Nonferrous Metals Society of China, 2006, 16: s321-s323.