High power semiconductor lasers with output power over 16 W for single emitter and 180 W for bar operation at 780 nm under CW operation

Yi Li; Haomiao Wang; Liang Zhang; Yuwen He; Kun Zhou; Weichuan Du; Linan He; Yao Hu; Deyong Wu; Songxin Gao; Chun Tang

doi:10.11884/HPLPB202335.230073

High Power Laser and Particle Beams, Volume. 35, Issue 11, 111002(2023)

High power semiconductor lasers with output power over 16 W for single emitter and 180 W for bar operation at 780 nm under CW operation

Yi Li^1,2, Haomiao Wang^1,2, Liang Zhang^1,2, Yuwen He^1,2、*, Kun Zhou^1,2, Weichuan Du^1,2, Linan He^1,2, Yao Hu^1,2, Deyong Wu^1,2, Songxin Gao^1,2, and Chun Tang^1,2

Author Affiliations

¹Institute of Applied Electronics, CAEP, Mianyang 621900, China

²The Key Labtorary of Science and Technology on High Energy Laser, CAEP, Mianyang 621900, China

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Figures & Tables(10)

Fig. 1. Energy bands diagram of 780 nm diode laser

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$Refractive index and mode distribution diagram of 780 nm diode laser$

Fig. 2. Refractive index and mode distribution diagram of 780 nm diode laser

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Fig. 3. SEM photo of deep isolation groove between emitters on bar

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Fig. 4. Optical output power, voltage, and conversion efficiency as function of current of 780 nm single emitter

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Fig. 5. Far field of 780 nm single emitter

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Fig. 6. Spectrum curve of 780 nm single emitter

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Fig. 7. Optical output power, voltage, and conversion efficiency as function of current of 780 nm diode laser bar

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Fig. 8. Spectrum curve of 780 nm diode laser bar

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Table 1. Performance comparison of 7xx nm diode laser single emitters

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Table 1. Performance comparison of 7xx nm diode laser single emitters

diode laser single emitter	wavelength/nm	emitter width/μm	power/W	conversion efficiency/%	fast axis divergence/(°)	slow axis divergence/(°)	spectral width/nm
nLight^[10]	786	200	10	64	50 (FW1/e²)	10 (FW1/e²)	1.7
Coherent^[11]	793	100	5.6	60.3	/	8.8 (FW95%)	/
Ferdinand-Braun-Institut^[5]	780	90	14 (pulse)	45	/	/	/
Ferdinand-Braun-Institut^[5]	780	1200	60 (pulse)	50	/	13 (FW95%)	/
Raybow Optoelectronics^[12]	755	350	12.7	54	37 (FWHM)	8 (FWHM)	/
Institute of Applied Electronics, CAEP^[13]	780	100	10.1	54	46 (FW95%)	7 (FW95%)	2.6
Everbright Photonics^[14]	780	150	7	71	39.9 (FWHM)	/	/
Everbright Photonics^[14]	780	150	16.3	60	39.9 (FWHM)	/	/
this work	780	150	16.3	58	45 (FW95%)	9.9 (FW95%)	1.81

Table 2. Performance comparison of 7xx nm diode laser bars

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Table 2. Performance comparison of 7xx nm diode laser bars

diode laser bar	wavelength/nm	emitter number	emitter width/μm	power/W	conversion efficiency/%	spectral width/nm
DILAS^[3]	780	19	150	110	57	2.2
Ferdinand-Braun-Institut^[15]	780	5	/	172 (pulse)	57	/
this work	780	19	200	180	50.7	2.2

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Yi Li, Haomiao Wang, Liang Zhang, Yuwen He, Kun Zhou, Weichuan Du, Linan He, Yao Hu, Deyong Wu, Songxin Gao, Chun Tang. High power semiconductor lasers with output power over 16 W for single emitter and 180 W for bar operation at 780 nm under CW operation[J]. High Power Laser and Particle Beams, 2023, 35(11): 111002

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Paper Information

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Received: Apr. 2, 2023

Accepted: Oct. 15, 2023

Published Online: Dec. 26, 2023

The Author Email: He Yuwen (18380597763@163.com)

DOI:10.11884/HPLPB202335.230073

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology