Chinese Optics Letters, Volume. 23, Issue 6, 062502(2025)

Optoelectronic neuro-synaptic behaviors of antiferroelectric NaNbO3/n-GaN heterostructures

Huijuan Dong1,2, Kexin Jin2, and Bingcheng Luo2、*
Author Affiliations
  • 1Department of Physics, Changzhi University, Changzhi 046011, China
  • 2School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710072, China
  • show less
    Figures & Tables(7)
    Characterization of NNO/n-GaN heterostructure. (a) XRD pattern. (b) Cross-SEM image. (c) The polarization-electric (P-E) field hysteresis loop at 1 kHz. (d) Frequency-dependent dielectric constant and loss.
    Photoelectric performance of NNO/n-GaN heterostructure. (a) Current-voltage (I-V) hysteresis loop (the inset shows the schematic diagram of the I-V measurement). (b) Ln(I)-ln(V) curves. (c) Typical device optical switching characteristics under the 330 nm light with an intensity of 2.7 µW/mm2. (d) Energy-band diagrams of optical responses.
    Electronic synaptic plasticity performances of NNO/n-GaN heterostructure. (a) I-V hysteresis under consecutive dual negative voltage sweeps. (b) Synaptic potentiation and synaptic depression triggered by electric stimuli. (c) PPF phenomenon. (d) Electrical PPF index versus time interval between successive pulses and fitting curves.
    Photo-induced PPF behavior in NNO/n-GaN heterostructure. (a) Neural signal transmission at biological synapses and device structure diagram. (b) Typical photoresponsive characteristic under a light pulse pair with a 5 s interval. (c) Photonic PPF index versus time interval (Δt) between successive pulses.
    Mimicking STM and LTM using NNO/n-GaN heterostructure. (a) Schematic diagram showing the biological memory consolidation process in the human brain. STM-to-LTM transition induced by increasing (b) number and (c) frequency of pulsed light stimuli.
    “Learning-experience” behavior of NNO/n-GaN heterostructure. The current increase with the number of optical pulses corresponds to the learning or relearning process, while the current decay after the light stimulation represents the forgetting process. Optical pulse parameters: light wavelength: 330 nm; intensity: 2.7 µW/mm2; pulse width: 5 s; frequency: 0.2 Hz.
    Emulation of visual memory function in NNO/n-GaN heterostructure. (a) Image mapping of N-shaped 4 × 4 array. (b) Dynamic learning and forgetting process of conductance response image mapping.
    Tools

    Get Citation

    Copy Citation Text

    Huijuan Dong, Kexin Jin, Bingcheng Luo, "Optoelectronic neuro-synaptic behaviors of antiferroelectric NaNbO3/n-GaN heterostructures," Chin. Opt. Lett. 23, 062502 (2025)

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Optoelectronics

    Received: Feb. 4, 2025

    Accepted: May. 8, 2025

    Published Online: Jun. 3, 2025

    The Author Email: Bingcheng Luo (luobingcheng@nwpu.edu.cn)

    DOI:10.3788/COL202523.062502

    CSTR:32184.14.COL202523.062502

    Topics