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Photonics Research, Volume. 7, Issue 8, 828(2019)

Ge-on-Si modulators operating at mid-infrared wavelengths up to 8  μm

Tiantian Li1,2, Milos Nedeljkovic1, Nannicha Hattasan1, Wei Cao1, Zhibo Qu1, Callum G. Littlejohns1,3, Jordi Soler Penades1, Lorenzo Mastronardi1, Vinita Mittal1, Daniel Benedikovic4, David J. Thomson1, Frederic Y. Gardes1, Hequan Wu2, Zhiping Zhou2, and Goran Z. Mashanovich1、*
Author Affiliations
  • 1Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK
  • 2State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China
  • 3Silicon Technologies Centre of Excellence, Nanyang Technological University, Singapore 639798, Singapore
  • 4Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N—Palaiseau, 91120 Palaiseau, France
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    CLP Journals

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    Tiantian Li, Milos Nedeljkovic, Nannicha Hattasan, Wei Cao, Zhibo Qu, Callum G. Littlejohns, Jordi Soler Penades, Lorenzo Mastronardi, Vinita Mittal, Daniel Benedikovic, David J. Thomson, Frederic Y. Gardes, Hequan Wu, Zhiping Zhou, Goran Z. Mashanovich, "Ge-on-Si modulators operating at mid-infrared wavelengths up to 8  μm," Photonics Res. 7, 828 (2019)

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    Paper Information

    Category: Integrated Photonics

    Received: Dec. 19, 2018

    Accepted: May. 27, 2019

    Published Online: Jul. 11, 2019

    The Author Email: Goran Z. Mashanovich (g.mashanovich@soton.ac.uk)

    DOI:10.1364/PRJ.7.000828

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology