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Microelectronics, Volume. 51, Issue 6, 918(2021)

Study on Breakdown Characteristics of 4H-SiC JBS with JTE Termination

JIANG Yude1, ZHOU Huifang2, ZHAO Linna1, GAN Xinhui2, GU Xiaofeng1, and JI Jianxin2
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    JIANG Yude, ZHOU Huifang, ZHAO Linna, GAN Xinhui, GU Xiaofeng, JI Jianxin. Study on Breakdown Characteristics of 4H-SiC JBS with JTE Termination[J]. Microelectronics, 2021, 51(6): 918

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    Received: Jan. 10, 2021

    Accepted: --

    Published Online: Feb. 14, 2022

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.210016

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology