Fig. 1. （a）Molecular formula of 4Si；（b）Molecular formula of benzophenone；（c）Molecular formula of PDMS；（d）Schematic diagram of the OFET device with bottom gate top contact.

Fig. 2. Electrical properties of the 4Si，B4Si，and C4Si films.（a）Transfer curves of 4Si，B4Si and C4Si；（b）Charge mobility of 4Si，B4Si and C4Si.

Fig. 3. Atomic force microscopy morphology of 4Si，B4Si and C4Si thin films.

Fig. 4. Mechanical properties of 4Si，B4Si and C4Si films.（a）Schematic diagram of device preparation for stretching thin films；（b）Optical microscopy images of 4Si，B4Si and C4Si thin films at 0%，30%，50% and 100% strain.

Fig. 5. Electrical properties of 4Si，B4Si and C4Si films after strain.（a）Transfer curves of 4Si，B4Si and C4Si films parallel to strain direction；（b）Transfer curves of 4Si，B4Si and C4Si films perpendicular to strain direction；（c）Charge mobility of 4Si，B4Si and C4Si films parallel to strain direction；（d）Charge mobility of 4Si，B4Si and C4Si films perpendicular to strain direction.

Fig. 6. Photo-patterning of cross-linked thin films.（a）Schematic diagram of the photo-patterning process；（b）Photo-patterning physical image；（c）Optical microscope image after photo-patterning.