[1] [1] J. C. Diels, W. Rudolph. Ultrashort Laser Pulse Phenomena: Fundamentals, Techniques and Applications on a Fentosecond Time Scale［M］. Albuguerque: Elsevier, 2006

[2] [2] S. K. Sundaram, E. Mazur. Inducing and probing non-thermal transitions in semiconductors using femtosecond laser pulses［J］. Nature Materials, 2002, 1(4): 217～224

[3] [3] A. Othonos. Probing ultrafast carrier and phonon dynamics in semiconductors［J］. J. Appl. Phys., 1998, 83(4): 1789～1830

[4] [4] M. K. Rafailov. Ultrafast bandgap photonics［C］. SPIE, 2011, 8031: 803128

[5] [5] M. K. Rafailov. Ultrafast bandgap photonics semiconductor phenomenology: response to ultra-short pulse laser［C］. SPIE, 2010, 7780: 778009

[6] [6] E. Garmire, N. M. Jokerst, A. Kost et al.. Optical nonlinearities due to carrier transport in semiconductors［J］. J. Opt. Soc. Am. B., 1989, 6(4): 579～587

[7] [7] J. G. Cederberg, D. A. Bender, M. V. Pack et al.. Observation of optical bleaching at 1.06 mm in AlInAs/AlGaInAs multiple quantum wells［J］. Journal of Crystal Growth, 2010, 312(8): 1375～1378

[8] [8] X. Sun, J. Liu, L. C. Kimerling et al.. Optical bleaching of thin film Ge on Si［J］. ECS Transactions, 2008, 16(10): 881～889

[9] [9] J. Liu, X. Sun, D. Pan et al.. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si［J］. Opt. Express, 2007, 15(8): 11272～11277

[10] [10] M. K. Rafailov. Ultrafast bandgap photonics for IR directional countermeasures and low observables［C］. SPIE, 2011, 8039: 803917

[11] [11] M. K. Rafailov, LLC Richer. Ultra-fast bandgap photonics: sensing and counter-sensing capabilities［C］. SPIE, 2008, 7055: 70550J

[12] [12] Liu Pengzu, Hou Jing, Zhang Bin et al.. 1550 nm passively mode-locked fiber laser with a semiconductor saturable absorber mirror［J］. Chinese J. Lasers, 2011, 38(7): 0702017

[13] [13] Zhang Haikun, Xu Jinlong, Huang Haitao et al.. Passively CW mode-locked Nd:YAG picosecond laser with a partially reflective semiconductor saturable-absorber mirror［J］. Chinese J. Lasers, 2010, 37(9): 2400～2403

[14] [14] J. H. Abeles, W. K. Chan, A. Kastalsky et al.. Guided-wave GaAs/AlGaAs FET optical modulator based on free-carrier-induced bleaching［J］. Electron. Lett., 1987, 23(24): 1302～1303

[15] [15] C. F. Klingshirn. Semiconductor Optics［M］. Berlin: Springer, 2006

[16] [16] W. Z. Lin, L. G. Fujimoto, E. P. Ippen et al.. Femtosecond carrier dynamics in GaAs［J］. Appl. Phys. Lett., 1987, 50(3): 124～126

[17] [17] T. Gong, W. L. Nighan, P. M. Fauchet. Hot carrier Coulomb effects in GaAs investigated by femtosecond spectroscopy around the band edge［J］. Appl. Phys. Lett., 1990, 57(25): 2713～2715

[18] [18] W. Z. Lin, J. G. Fujimoto, E. P. Ippen et al.. Femtosecond dynamics of highly excited carriers in AlxGa1-xAs［J］. Appl. Phys. Lett., 1987, 51(3): 161～163

[19] [19] P. C. Becker, H. L. Fragnito, C. H. B. Cruz et al.. Femtosecond intervalley scattering in GaAs［J］. Appl. Phys. Lett., 1988, 53(21): 2089～2090

[20] [20] Y. Huang, G. Chern, K. Lin et al.. Femtosecond dynamics of exciton bleaching in bulk GaN at room temperature［J］. Appl. Phys. Lett., 2002, 81(1): 85～87

[21] [21] J. Zhang, D. Bauer, F. Knig et al.. Ultrafast spectroscopy of semiconductor saturable absorber mirror［J］. Chin. Opt. Lett., 2010, 8(7): 676～979

[22] [22] Fang Rongchuan. Sollids Spectroscopy［M］. Hefei: The Press of University of Science and Technology of China, 2003. 57～68

[23] [23] S. L. Chuang. Physics of Optoelectronic Devices［M］. New York: Wiley, 1995