Journal of Semiconductors, Volume. 44, Issue 7, 072801(2023)

Tunneling via surface dislocation in W/β-Ga2O3 Schottky barrier diodes

Madani Labed1、*, Ji Young Min1, Amina Ben Slim2, Nouredine Sengouga2, Chowdam Venkata Prasad1, Sinsu Kyoung3, and You Seung Rim1,4、**
Author Affiliations
  • 1Department of Intelligent Mechatronics Engineering, Sejong University, Seoul 05006, Republic of Korea
  • 2Laboratory of Semiconducting and Metallic Materials (LMSM), University of Biskra, Biskra 07000, Algeria
  • 3Research and Development, Powercubesemi Inc., Sujeong-gu, Seongnam-si, Gyeonggi-do 13449, Republic of Korea
  • 4Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea
  • show less
    Figures & Tables(5)
    An SEM cross section image of W/β-Ga2O3 SBD.
    (Color online) (a) Measured J–V of W/β-Ga2O3 SBDs at different temperatures (100–300 K) and (b) shows the double regions at low voltage domain at low temperatures (100–180 K).
    (Color online) Temperature dependent ideality factor,ϕb, Rs and Ron.
    (Color online) Extracted band diagram shows barrier height at different temperatures.
    (Color online) Extracted saturation current (Jt) and tunneling parameter E0 at different operation temperatures and their polynomial extrapolation equations.
    Tools

    Get Citation

    Copy Citation Text

    Madani Labed, Ji Young Min, Amina Ben Slim, Nouredine Sengouga, Chowdam Venkata Prasad, Sinsu Kyoung, You Seung Rim. Tunneling via surface dislocation in W/β-Ga2O3 Schottky barrier diodes[J]. Journal of Semiconductors, 2023, 44(7): 072801

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Articles

    Received: Nov. 26, 2022

    Accepted: --

    Published Online: Aug. 7, 2023

    The Author Email: Madani Labed (youseung@sejong.ac.kr), You Seung Rim (youseung@sejong.ac.kr)

    DOI:10.1088/1674-4926/44/7/072801

    Topics