Journal of Semiconductors, Volume. 44, Issue 7, 072801(2023)
Tunneling via surface dislocation in W/β-Ga2O3 Schottky barrier diodes
Fig. 2. (Color online) (a) Measured J–V of W/β-Ga2O3 SBDs at different temperatures (100–300 K) and (b) shows the double regions at low voltage domain at low temperatures (100–180 K).
Fig. 3. (Color online) Temperature dependent ideality factor,
Fig. 4. (Color online) Extracted band diagram shows barrier height at different temperatures.
Fig. 5. (Color online) Extracted saturation current (Jt) and tunneling parameter E0 at different operation temperatures and their polynomial extrapolation equations.
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Madani Labed, Ji Young Min, Amina Ben Slim, Nouredine Sengouga, Chowdam Venkata Prasad, Sinsu Kyoung, You Seung Rim. Tunneling via surface dislocation in W/β-Ga2O3 Schottky barrier diodes[J]. Journal of Semiconductors, 2023, 44(7): 072801
Category: Articles
Received: Nov. 26, 2022
Accepted: --
Published Online: Aug. 7, 2023
The Author Email: Madani Labed (youseung@sejong.ac.kr), You Seung Rim (youseung@sejong.ac.kr)