Fig. 1. Schematic and structure diagram of the device. (a) Structure diagram of MSM perovskite photodetector integrated on SP-MMF. (b) Schematic of the device.

Fig. 2. Mode field in 647 nm thick FA0.4MA0.6PbI3 thin film. (a) Simplified schematic of the device. (b) Mode field distribution obtained from simulations for the FA0.4MA0.6PbI3 film with a thickness of 647 nm. (c) Variation of the intensity of Poynting vector along the positive y-axis.

Fig. 3. Analysis of resonance thickness conditions for the active layer of AFPD. (a) A simplified slab waveguide model for exploring the intensity variation of mode field along the y-axis. (b) The curve depicting the relationship between the thickness h4 of FA0.4MA0.6PbI3 and effective refractive index N.

Fig. 4. Validation of the resonant thickness condition through simulation. Simulation results depicting the distribution (a)–(f) and intensity (g)–(l) of the mode field under different resonance thickness conditions. (m) Discrepancy between simulated and calculated values.

Fig. 5. Device fabrication process. (a)–(d) Schematic diagrams illustrating the device fabrication process. (e) Structural model and physical picture of the fabricated device sample.

Fig. 6. Schematic of the experimental setup. (a) Overview diagram. (b) Physical picture of the performance test. (c) Enlarged view of the red dashed box in (b).

Fig. 7. Images and characterization for the deposited film. (a) Microscope image and (b) enlarged view of the FA0.4MA0.6PbI3 thin film deposited on the polished surface of SP-MMF. (c) XRD pattern of the fabricated FA0.4MA0.6PbI3 thin film. (d) UV-VIS absorption spectrum of the fabricated FA0.4MA0.6PbI3 film.

Fig. 8. Band diagram of the MSM photodetector (a) without bias voltage, (b) under a small bias voltage, and (c) under a higher bias voltage.

Fig. 9. AFPD response to 650 nm light. (a) I-V curves of the device for different power levels of 650 nm light. (b) I-V curves of low bias range where Schottky contact characteristics can be observed. (c) Variation curve of the device’s responsivity with increasing light power under different biases. (d) Variation trends of device’s EQE and D* with increasing bias voltage for 0.2 μW 650 nm light.

Fig. 10. Response time of the device to 650 nm light under different bias voltages. (a)–(c) Device’s response time to 650 nm light of different powers under bias voltages of −1  V, −2  V, and −3  V, respectively. (d) Response time of the device to 2.5 μW 650 nm light under different bias voltages.

Fig. 11. Fixed layer thickness of 446 nm and the resonance condition for wavelength. (a) Calculation results for the resonance wavelength conditions. (b)–(d) Mode field distributions under different resonance wavelength conditions.

Fig. 12. Influence of the deviation of h4 from the resonant thickness condition on the mode field intensity within the active layer.

Fig. 13. (a)–(g) Variation of absorbance along the y-axis. (h) Influences of h4 deviation from resonance thickness condition on absorption loss.

Fig. 14. Microscope image of the polished surface of SP-MMF.

Fig. 15. Microscope images of the polished surface of SP-MMF. (a), (b) AFM testing and roughness results. (c) Thickness acquired from profilometer.