[1] [1] SakaguchiT., Koyama F., Iga K.. Vertical cavity surface-emitting laser with an AlGaAs/AlAs Bragg reflector. Electron. Lett., 1988, 24(15):928～929

[2] [2] Ibaiaki A., Kawashima K., Furusawa K. et al.. Buried heterostructure GaAsGa/AlAs distributed Bragg reflector surface emitting laser with very low threshold (5.2mA) under room temperature CW conditions. Jpn. J. Appl. Phys., Pt.2, 1989, 28(4):L667～L668

[3] [3] Zinkiewicz L. M., Roth T. J., Mawst L. J. et al.. High-power vertical-cavity surface-emitting AlGaAs/GaAs diode lasers. Appl. Phys. Lett., 1989, 54(20):1959～1961

[4] [4] Jewell J. L., Scherer A., Mc Call S. L. et al.. Low-threshold electrically pumped vertical-cavity surface-emitting microlasers. Electr. Lett., 1989, 25(17):1123～1124

[5] [5] Y. J. Yang, T. G. Dziura, R. Fernandez et al.. Low-threshold operation of a GaAs single quantum well mushroom structure surface-emitting laser. Appl. Phys. Lett., 1991, 58(16):1780～1782

[6] [6] Guotong Du, J. Lin, J. K. Gamelin et al.. Ohmic heating and series resistance of a vertical-microcavity surface-emitting laser. Appl. Phys. Lett., 1991, 59(3):265～267

[7] [7] Y. H. Lee, B. Tell, K. Brown-Goebeler et al.. Top surface-emitting GaAs four-quantum well lasers emitting at 0.85 μm. Electr. Lett., 1990, 26:710～711

[8] [8] Kent D. Choquette, K. L. Lear, R. P. Schneider et al.. Fabrication and performance of selectively oxidized vertical-cavity lasers. IEEE Photonics Tech. Lett., 1995, 7(11):1237～1239