Journal of Semiconductors, Volume. 42, Issue 11, 112801(2021)

GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

Feng Liang1, Degang Zhao1,2, Zongshun Liu1, Ping Chen1, Jing Yang1, Lihong Duan1, Yongsheng Shi1, and Hai Wang1
Author Affiliations
  • 1State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
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    Figures & Tables(3)
    (Color online) The schematic structure of the GaN-based blue LD chip. The ridge waveguide structure is 30 × 1200 μm2.
    (Color online) Photoluminescence image in micro-scale of a GaN-based blue LD grown on GaN substrate.
    (Color online) (a) P–I–V curves of a GaN-based blue LD in C-mount package under continuous-wave operation at room temperature. (b) The optical spectrum of stimulated emission for a GaN-based blue LD under 500 mA continuous-wave operation at room temperature.
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    Feng Liang, Degang Zhao, Zongshun Liu, Ping Chen, Jing Yang, Lihong Duan, Yongsheng Shi, Hai Wang. GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature[J]. Journal of Semiconductors, 2021, 42(11): 112801

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    Paper Information

    Category: Articles

    Received: Aug. 17, 2021

    Accepted: --

    Published Online: Nov. 12, 2021

    The Author Email:

    DOI:10.1088/1674-4926/42/11/112801

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