Fig. 1. （a）Schematic illustration of synthetic procedure of blue InP_ESC@ZnS QDs；（b）Schematic of the InP_ESC@ZnS device structure；（c）Corresponding energy band diagram；（d）Current density-voltage-luminance curves of the device；（e）EL spectra of a QLED at increasing operating voltages^［36］；（f）Schematic illustration of the synthesis of blue InP/ZnS/ZnS QDs；（g）Energy-band diagram of the QLED；（h）UPS spectra of secondary-electron cut-off regions and valence band edge regions for InP/ZnS/ZnS QD films；（i）Normalized EL and PL spectra；（j）Current density and luminance versus driving voltage characteristics^［38］.

Fig. 2. （a）Schematic synthesis of blue-emitting InP/ZnS QDs with Cu-assisted process^［39］；（b）Schematic illustration for the synthesis of InP/ZnS/ZnS quantum dots；（c）Energy band diagram of the quantum dot light-emitting diodes；（d）Normalized PL and EL spectra；（e）Current density-voltage-luminance curves；（f）EQE-Current density curves^［40］.

Fig. 3. （a）Energy levels of InP，GaP and ZnS，and the lattice mismatch values between them and schematic diagram of the synthesis process of InP/GaP/ZnS//ZnS with thick shell structure；（b）Energy level illustration for each layer materials of QLEDs；（c）EL spectra and highly bright EL emission from one emitting spot of devices at different voltages^［9］；（d）Schematic of InP/GaP/ZnS reaction scheme presented in the top panel，the expected quantum dot structure at each reaction step is shown in the panel below；（e）Schematic of the InP/GaP/ZnS multilayered all-solution processed QLED；（f）Normalized PL and EL spectra；（g）Current density-voltage-luminance characteristics；（h）Current efficiency and external quantum efficiency as a function of the current density ^［44］.

Fig. 4. （a）Absorption and photoluminescence spectra of the QDs；（b）Schematic of the synthesis procedure of the large-size ZnSe/ZnS/ZnS core/shell/shell QDs^［51］；（c）Energy level diagram Schematic；（d）Effect of ZnS shell thickness on electron and hole injection efficiency in the device；Different ZnS shell thicknesses of quantum dots（e）UV-absorption spectra and（f）photoluminescene spectra；Different ZnSe thicknesses of quantum dots（g）normalized electroluminescence spectra and（h）current density-voltage curve^［41］.

Fig. 5. （a）Schematic diagram of the syntheses of the ZnSeTe core and ZnSeTe/ZnSe/ZnS QDs without hydrofluoric acid（HF）；（b）Representative schematic illustration of the ligand exchange from oleic acid（OA）to alkanethiol ligands；（c）Absorbance and photoluminescence spectra of C/S/S QDs depending on the HF treatment^［53］；（d）Schematic diagram of the Br passivation of unsaturated Zn on QD surface with a magnified area extracted from the red rectangular box；（e）Energy band diagram of each functional layer in QLEDs；（f）Steady-state photoluminescence of the pristine and pristine-Br QDs（inset：the fluorescent pictures of QD solution under UV-lamp）；（g）EL spectra of the pristine and pristine-Br QDs^［47］.