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Chinese Journal of Lasers, Volume. 50, Issue 16, 1602209(2023)

Surface Quality of Silicon Carbide Ceramics Polished by Coupled Laser Based on Bidirectional Spot Overlap Ratio Regulation

Guiying Ma1,2, Xiaoxiao Chen2,3、*, Tao Chen2,4, and Wenwu Zhang2,3
Author Affiliations
  • 1School of Mechanical Engineering and Mechanics, Ningbo University, Ningbo 315211, Zhejiang, China
  • 2Zhejiang Key Laboratory of Aero-Engine Extreme Manufacturing Technology Research, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, Zhejiang, China
  • 3Ningbo College of Materials Engineering, University of Chinese Academy of Sciences, Ningbo 315201, Zhejiang, China
  • 4School of Mechanical and Electrical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi, China
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    Figures & Tables(14)
    Schematic of laser processing platform

    Fig. 1. Schematic of laser processing platform

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    Three-dimensional topographies after multi-beam and single-beam ablation. (a) Top view of morphology after multi-beam ablation; (b) side view of morphology after multi-beam ablation; (c) section view of morphology after multi-beam ablation; (d) top view of morphology after single-beam ablation; (e) side view of morphology after single-beam ablation; (f) section view of morphology after single-beam ablation

    Fig. 2. Three-dimensional topographies after multi-beam and single-beam ablation. (a) Top view of morphology after multi-beam ablation; (b) side view of morphology after multi-beam ablation; (c) section view of morphology after multi-beam ablation; (d) top view of morphology after single-beam ablation; (e) side view of morphology after single-beam ablation; (f) section view of morphology after single-beam ablation

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    Micro-morphologies after single-pass scanning by multibeam and single beam. (a) Multibeam; (d) single beam

    Fig. 3. Micro-morphologies after single-pass scanning by multibeam and single beam. (a) Multibeam; (d) single beam

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    Area division of laser polished silicon carbide ceramics, scanning mode, and confocal observation morphologies of initial surface. (a) Division map of laser processing area; (b) diagram of laser scanning trajectory; (c) diagram of spot overlap ratio calculation; (d) morphology of unprocessed area of silicon carbide ceramics; (e) local enlargement of box area in Fig. 4 (d); (f) local enlargement of box area in Fig. 4 (e)

    Fig. 4. Area division of laser polished silicon carbide ceramics, scanning mode, and confocal observation morphologies of initial surface. (a) Division map of laser processing area; (b) diagram of laser scanning trajectory; (c) diagram of spot overlap ratio calculation; (d) morphology of unprocessed area of silicon carbide ceramics; (e) local enlargement of box area in Fig. 4 (d); (f) local enlargement of box area in Fig. 4 (e)

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    Surface micro-morphologies of silicon carbide ceramics polished by laser with different ED and δ

    Fig. 5. Surface micro-morphologies of silicon carbide ceramics polished by laser with different ED and δ

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    Relationships between surface roughness of laser polished SiCand ED (δ). (a) Three-dimensional histogram; (b) Ra versus δ; (c) Rz versus δ

    Fig. 6. Relationships between surface roughness of laser polished SiCand ED (δ). (a) Three-dimensional histogram; (b) Ra versus δ; (c) Rz versus δ

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    2D and 3D morphologies of initial surface and laser polished surface. (a) 2D and (b) 3D morphologies of initial surface; (c) 2D and (d) 3D morphologies of surface when δ is 70% and ED is 2.294 J/cm2; (e) line profiles of initial surface and polished surface

    Fig. 7. 2D and 3D morphologies of initial surface and laser polished surface. (a) 2D and (b) 3D morphologies of initial surface; (c) 2D and (d) 3D morphologies of surface when δ is 70% and ED is 2.294 J/cm2; (e) line profiles of initial surface and polished surface

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    Micro-morphologies of polished surfaces under different n. (a) 1; (b) 2

    Fig. 8. Micro-morphologies of polished surfaces under different n. (a) 1; (b) 2

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    Raman spectra of peak top and peak valley on surface of silicon carbide when ED=2.711 J/cm2 and δ=80%. (a) Detection position; (b) comparison of Raman spectra

    Fig. 9. Raman spectra of peak top and peak valley on surface of silicon carbide when ED=2.711 J/cm2 and δ=80%. (a) Detection position; (b) comparison of Raman spectra

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    SEM and EDS detection results for initial surface. (a) SEM; (b) EDS

    Fig. 10. SEM and EDS detection results for initial surface. (a) SEM; (b) EDS

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    SEM images of polished surface under different parameters. (a1)(a2) ED=2.294 J/cm2, δ=50%; (b1)(b2) ED=2.294 J/cm2, δ=60%; (c1)(c2) ED=2.294 J/cm2, δ=70%; (d1)(d2) ED=2.294 J/cm2, δ=80%; (e1)(e2) ED=2.711 J/cm2, δ=50%; (f1)(f2) ED=2.711 J/cm2, δ=60%; (g1)(g2) ED=2.711 J/cm2, δ=70%; (h1)(h2) ED=2.711 J/cm2, δ=80%

    Fig. 11. SEM images of polished surface under different parameters. (a1)(a2) ED=2.294 J/cm2, δ=50%; (b1)(b2) ED=2.294 J/cm2, δ=60%; (c1)(c2) ED=2.294 J/cm2, δ=70%; (d1)(d2) ED=2.294 J/cm2, δ=80%; (e1)(e2) ED=2.711 J/cm2, δ=50%; (f1)(f2) ED=2.711 J/cm2, δ=60%; (g1)(g2) ED=2.711 J/cm2, δ=70%; (h1)(h2) ED=2.711 J/cm2, δ=80%

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    SEM and EDS detection results of SiC ceramics polished with different ED when δ is 80%

    Fig. 12. SEM and EDS detection results of SiC ceramics polished with different ED when δ is 80%

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    Mass fraction of each element versus ED when δ is 80%. (a) Si and C elements; (b) O element

    Fig. 13. Mass fraction of each element versus ED when δ is 80%. (a) Si and C elements; (b) O element

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    • Table 1. Main process parameters of laser polishing silicon carbide ceramics

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      Table 1. Main process parameters of laser polishing silicon carbide ceramics

      ED /（J·cm-2）δx=δyΔ /μmv /（mm·s-1）
      1.4600.812.76191.4
      0.719.14287.1
      0.625.52382.8
      0.531.90478.5
      1.8770.812.76191.4
      0.719.14287.1
      0.625.52382.8
      0.531.90478.5
      2.2940.812.76191.4
      0.719.14287.1
      0.625.52382.8
      0.531.90478.5
      2.7110.812.76191.4
      0.719.14287.1
      0.625.52382.8
      0.531.90478.5
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    Guiying Ma, Xiaoxiao Chen, Tao Chen, Wenwu Zhang. Surface Quality of Silicon Carbide Ceramics Polished by Coupled Laser Based on Bidirectional Spot Overlap Ratio Regulation[J]. Chinese Journal of Lasers, 2023, 50(16): 1602209

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    Paper Information

    Category: Laser Surface Machining

    Received: Sep. 5, 2022

    Accepted: Dec. 20, 2022

    Published Online: Jul. 11, 2023

    The Author Email: Chen Xiaoxiao (chenxiaoxiao@nimte.ac.cn)

    DOI:10.3788/CJL221213

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology