It is widely acknowledged that the temperature plays a crucial role in the process of electrochemical etching Si microchannel. Therefore, by studying the influences of temperature on the hole transportation during the electrochemical corrosion process, better understanding about the process of electrochemical etching Si microchannel can be expected. Using n-type monocrystalline silicon with (100) crystallographic orientation as the research subject, an electrochemical light assisted anode oxidation method was devised for getting the I-V curves, the morphology and the depth of microchannel at the different temperature. According to the relevant principles of the scattering mechanism in the crystal, the relationships between the temperature and the carrier mobility and the diffusion coefficient were also studied and the relationship between the temperature and the dark current was finally found. Based on the further analysis regarding to the above results, it is concluded that the lower temperature caused the less current density produced by the hole transportation and the lower value of dark current. Thus, the well-defined microchannels can be achieved by using the electrochemical corrosion method at low temperature.