Chinese Journal of Lasers, Volume. 46, Issue 9, 911001(2019)
Rapid Quantitative Analysis of Element Content Ratios in Cu(In,Ga)Se2 Thin Films Using Laser-Induced Breakdown Spectroscopy
Figures & Tables(8)
Fig. 2. Relationship between spectral line intensity and bombardment times of 327.39 nm Cu atomic radiation spectral line during 20 consecutive laser bombardments
Fig. 3. LIBS spectra of CIGS thin films. (a) 280-305 nm; (b) 320-334 nm; (c) 402-420 nm; (d) 505-530 nm; (e) 570-580 nm; (f) 775-810 nm
Fig. 4. Relationship among spectral line intensity ratio, atomic ratio, and sputtering time. (a) Relationship between spectral line intensity ratio and sputtering time; (b) relationship between atomic ratio and sputtering time
Fig. 5. Calibration curves of atom ratios of elements in CIGS thin films. (a) P1; (b) P2
Table 1. EDS values of CIGS thin films deposited at different sputtering time
View tableTable 1. EDS values of CIGS thin films deposited at different sputtering time
Sputtering time /min Atomic fraction /% A 1A 2Cu In Ga Se 5 16.50 17.110 7.48 58.910 0.304 0.67 10 18.42 16.005 6.80 58.770 0.298 0.81 20 21.33 18.290 7.24 53.135 0.284 0.84 30 20.53 18.275 6.94 54.255 0.275 0.81 40 21.76 19.415 6.26 52.570 0.244 0.85 50 22.39 18.745 6.78 52.080 0.266 0.88 55 22.59 17.788 7.24 52.390 0.289 0.90
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Liu Shiming, Xiu Junshan, Liu Yunyan. Rapid Quantitative Analysis of Element Content Ratios in Cu(In,Ga)Se2 Thin Films Using Laser-Induced Breakdown Spectroscopy[J]. Chinese Journal of Lasers, 2019, 46(9): 911001
Paper Information
Category: spectroscopy
Received: Mar. 5, 2019
Accepted: --
Published Online: Sep. 10, 2019
The Author Email: Junshan Xiu (xiujunshan@126.com)
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