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Laser & Optoelectronics Progress, Volume. 57, Issue 23, 231603(2020)

Reflected High Energy Electron Diffraction Optimizing GaSb Film Growth Process

Dan Fang, Qiang Zhang*, Han Li, and Kaihui Gu
Author Affiliations
  • Department of Optical and Electronical Science, College of Optical and Electronical Information, Changchun University of Science and Technology, Changchun, Jilin 130022, China
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    AbstractGet PDF(in Chinese)
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    GaSb film grown with epitaxial technology

    Fig. 1. GaSb film grown with epitaxial technology

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    Changes of patterns on RHEED screen during deoxidation process. (a) Before deoxidation; (b) start deoxidizing; (c) deoxidizing layer; (d) end of deoxidation

    Fig. 2. Changes of patterns on RHEED screen during deoxidation process. (a) Before deoxidation; (b) start deoxidizing; (c) deoxidizing layer; (d) end of deoxidation

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    RHEED curve(Ga source is 1020 ℃ and Sb source is 900 ℃)

    Fig. 3. RHEED curve(Ga source is 1020 ℃ and Sb source is 900 ℃)

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    Influence of substrate temperature on film growth. (a) 600 ℃; (b) 580 ℃; (c) 520 ℃

    Fig. 4. Influence of substrate temperature on film growth. (a) 600 ℃; (b) 580 ℃; (c) 520 ℃

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    RHEED patterns of GaSb films grown at 520 ℃. (a) No growth; (b) start to grow; (c) grow for a period of time; (d) grow complete

    Fig. 5. RHEED patterns of GaSb films grown at 520 ℃. (a) No growth; (b) start to grow; (c) grow for a period of time; (d) grow complete

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    XRD curve of GaSb film

    Fig. 6. XRD curve of GaSb film

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    Surface morphology of GaSb film grown at different beam-to-current ratios. (a) Beam-to-current ratio is 1; (b) beam-to-current ratio is 3; (c) beam-to-current ratio is 5; (d) beam-to-current ratio is 8

    Fig. 7. Surface morphology of GaSb film grown at different beam-to-current ratios. (a) Beam-to-current ratio is 1; (b) beam-to-current ratio is 3; (c) beam-to-current ratio is 5; (d) beam-to-current ratio is 8

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    • Table 1. Relationship between growth parameters and half peak width of films

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      Table 1. Relationship between growth parameters and half peak width of films

      Sample numberGrowth rate/(ML·s-1)Beam-to-current ratioSubstrate temperature/℃Half peak width/(°)Dislocation density/cm-1
      Sample-1-1520-1500
      Sample-20.3245200.0311440
      Sample-30.655200.0111100
      Sample-40.885200.0241310
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    Dan Fang, Qiang Zhang, Han Li, Kaihui Gu. Reflected High Energy Electron Diffraction Optimizing GaSb Film Growth Process[J]. Laser & Optoelectronics Progress, 2020, 57(23): 231603

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    Paper Information

    Category: Materials

    Received: Aug. 1, 2020

    Accepted: Sep. 15, 2020

    Published Online: Dec. 9, 2020

    The Author Email: Qiang Zhang (38796996@qq.com)

    DOI:10.3788/LOP202057.231603

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology