Journal of Inorganic Materials, Volume. 38, Issue 3, 243(2023)

Progress in GaN Single Crystals: HVPE Growth and Doping

Zhanguo QI1, Lei LIU1, Shouzhi WANG1、*, Guogong WANG1, Jiaoxian YU2, Zhongxin WANG1, Xiulan DUAN1, Xiangang XU1, and Lei ZHANG1、*
Author Affiliations
  • 11. Institute of Novel Semiconductors, State Key Laboratory of Crystal Material, Shandong University, Jinan 250100, China
  • 22. School of Materials Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China
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    Figures & Tables(10)
    Schematic diagram of GaN[4]
    Structure of HVPE reactor[8]
    Photos and characterization of GaN crystals grown by HVPE
    Si-doped HVPE-GaN[38]
    Ge-doped HVPE-GaN[47]
    Mg-doped HVPE-Ga
    Image of semi-insulated GaN wafers
    Fe-doped GaN
    C-doped GaN
    • Table 1. Different types of doped GaN[2-3,32]

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      Table 1. Different types of doped GaN[2-3,32]

      n typeSiSiCl2H2High carrier concentration; anti-surfactant effectHigh power and high current optoelectronic devices (LED, LD)
      GeGeCl4/Ge3N4Little effect on lattice structure and stress, causing no morphological deterioration, higher carriers concentration than that of Si-doped; creating cavities inside the sample[3]
      p typeMgMg(S)Increased lattice constant and band gap width, high conductivityLuminescent device[32]
      Semi-insulatingFeFe(S)/Cp2FeHigh resistivity (iron showing a parasitic effect, easy to diffuse)High power/frequency devices, HEMT, photoconductive switch, detectors[2]

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    Zhanguo QI, Lei LIU, Shouzhi WANG, Guogong WANG, Jiaoxian YU, Zhongxin WANG, Xiulan DUAN, Xiangang XU, Lei ZHANG. Progress in GaN Single Crystals: HVPE Growth and Doping[J]. Journal of Inorganic Materials, 2023, 38(3): 243

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    Paper Information


    Received: Oct. 17, 2022

    Accepted: --

    Published Online: Oct. 16, 2023

    The Author Email: WANG Shouzhi (, ZHANG Lei (