Energy storage properties in Nd-doped AgNbTaO<sub>3</sub> lead-free antiferroelectric ceramics with Nb-site vacancies

Zhilun Lu; Dongyang Sun; Ge Wang; Jianwei Zhao; Bin Zhang; Dawei Wang; Islam Shyha

doi:10.1142/S2010135X22420061

Journal of Advanced Dielectrics, Volume. 13, Issue 1, 2242006(2023)

Energy storage properties in Nd-doped AgNbTaO₃ lead-free antiferroelectric ceramics with Nb-site vacancies

Zhilun Lu^1、*, Dongyang Sun¹, Ge Wang², Jianwei Zhao³, Bin Zhang³, Dawei Wang³, and Islam Shyha¹

Author Affiliations

¹School of Computing, Engineering and The Built Environment, Edinburgh Napier University, Edinburgh EH10 5DT, UK

²Department of Materials, University of Manchester, Manchester S13 9PL, UK

³Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China

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Zhilun Lu, Dongyang Sun, Ge Wang, Jianwei Zhao, Bin Zhang, Dawei Wang, Islam Shyha. Energy storage properties in Nd-doped AgNbTaO₃ lead-free antiferroelectric ceramics with Nb-site vacancies[J]. Journal of Advanced Dielectrics, 2023, 13(1): 2242006

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Paper Information

Category: Research Articles

Received: Sep. 25, 2022

Accepted: Oct. 28, 2022

Published Online: Mar. 20, 2023

The Author Email: Zhilun Lu (z.lu@napier.ac.uk)

DOI:10.1142/S2010135X22420061

CSTR:32405.14.S2010135X22420061

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