[1] [1] YANO H, HIRAO T, KIMOTO T, et al. High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face[J]. IEEE Electron Device Letters, 1999, 20(12): 611-613.

[2] [2] ZETTERLING C M. Process technology for silicon carbide devices[M]. London: IET, 2002.

[3] [3] ZOLPER J C. Emerging silicon carbide power electronics components[C]//Twentieth Annual IEEE Applied Power Electronics Conference and Exposition, 2005. APEC 2005. Austin, TX, USA. 2005: 11-17.

[4] [4] SHE X, HUANG A Q, LUCA , et al. Review of silicon carbide power devices and their applications[J]. IEEE Transactions on Industrial Electronics, 2017, 64(10): 8193-8205.

[5] [5] SNEAD L L, NOZAWA T, KATOH Y, et al. Handbook of SiC properties for fuel performance modeling[J]. Journal of Nuclear Materials, 2007, 371(1-3): 329-377.

[6] [6] ZHU Q L, WANG L, ZHANG L Q, et al. Improved medium voltage AC-DC rectifier based on 10kV SiC MOSFET for Solid State Transformer (SST) application[C]//2016 IEEE Applied Power Electronics Conference and Exposition. Long Beach, CA, USA. 2016: 2365-2369.

[7] [7] VUDUMULA P, KOTAMRAJU S. Design and optimization of 1.2-kV SiC planar inversion MOSFET using split dummy gate concept for high-frequency applications[J]. IEEE Transactions on Electron Devices, 2019, 66(12): 5266-5271.

[8] [8] BUFFOLO M, FAVERO D, MARCUZZI A, et al. Review and outlook on GaN and SiC power devices: Industrial state-of-the-art, applications, and perspectives[J]. IEEE Transactions on Electron Devices, 2024, 71(3): 1344-1355.

[9] [9] KONG M F, HU Z W, YAN R H, et al. A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance[J]. Journal of Semiconductors, 2023, 44(5): 052801.

[10] [10] LU X L, JIA Y P, ZHOU X T, et al. Design and simulation of 1.2kV SiC super-junction SBD with vertical variation doping[C]//2022 4th International Conference on Power and Energy Technology. Beijing, China. 2022: 242-246.

[11] [11] GUO Z Y, HE Z, WANG F X, et al. Study of vertical capacitance in an n-type 4H-SiC stepped thick-oxide trench MOS structure[J]. IEEE Transactions on Electron Devices, 2022, 69(8): 4617-4623.

[12] [12] WU Y Y, WANG K, YUAN J, et al. A novel SiC trench MOSFET with unilateral deep P buried layer for improved short-circuit capability[C]//2024 IEEE 2nd International Conference on Power Science and Technology. Dali, China. 2024: 89-93.

[13] [13] SUTO T, SUEMATSU T, MORI Y, et al. Development of wide-JFET trench-etched double-diffused MOS (TED-MOS) for high-voltage applications[J]. IEEE Transactions on Electron Devices, 2024, 71(4): 2570-2576.

[14] [14] ZHOU X T, ZHANG S D, LI M W, et al. SiC trench MOSFET with embedded Schottky super barrier rectifier for high temperature ruggedness[J]. IEEE Transactions on Electron Devices, 2023, 70(11): 5786-5794.

[15] [15] TAN J, COOPER J A, MELLOCH M R. High-voltage accumulation-layer UMOSFETs in 4H-SiC[C]//56th Annual Device Research Conference Digest. Charlottesville, VA, USA. 1998: 88-89.

[16] [16] ZHOU X T, YUE R F, ZHANG J, et al. 4H-SiC trench MOSFET with floating/grounded junction barrier-controlled gate structure[J]. IEEE Transactions on Electron Devices, 2017, 64(11): 4568-4574.

[17] [17] WEI J, ZHANG M, JIANG H P, et al. Dynamic degradation in SiC trench MOSFET with a floating p-shield revealed with numerical simulations[J]. IEEE Transactions on Electron Devices, 2017, 64(6): 2592-2598.

[18] [18] SUN R Z, DENG X C, LI X, et al. An adjustable P-region potential SiC trench MOSFET with improved high-frequency and short-circuit performance[J]. IEEE Transactions on Electron Devices, 2023, 70(12): 6492-6497.

[19] [19] CHEN X. Low voltage power supply. U.S. patent: 8294215[P]. 2012-10-23.