Laser & Optoelectronics Progress, Volume. 55, Issue 12, 121401(2018)

1.3 W Single-Frequency Tapered Semiconductor Laser Amplification System with Wide Tuning Range

Qian Li1,2, Min Wan1, Yanhua Lu1、*, Xiafei Xu1, Huaijin Ren1, and Hao Tan1
Author Affiliations
  • 1 Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang, Sichuan 621900, China
  • 2 Graduate School of China Academy of Engineering Physics, Beijing 100088, China
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    Figures & Tables(8)
    Schematic of experimental setup
    Spectra of the seeding light at 920 nm (a) before and (b) after amplification
    Relationship between linewidth of amplified laser and TA injection current
    Variation in fluorescent power and output power of TA with the injection current
    Output laser spectra with or without seed injection
    Relationship between the output power of TA and the seeding power
    Relationship between the output power of TA and injection current at different wavelengths
    • Table 1. Spot radius and theoretical coupling efficiency after focusing with different focal-length lenses

      View table

      Table 1. Spot radius and theoretical coupling efficiency after focusing with different focal-length lenses

      Focal length of lens /mm3.104.515.50
      Spot radius /μmFast axis0.8121.1741.428
      Slow axis0.6991.0291.220
      Coupling efficiency /%95.8980.3570.52
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    Qian Li, Min Wan, Yanhua Lu, Xiafei Xu, Huaijin Ren, Hao Tan. 1.3 W Single-Frequency Tapered Semiconductor Laser Amplification System with Wide Tuning Range[J]. Laser & Optoelectronics Progress, 2018, 55(12): 121401

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    Paper Information

    Category: Lasers and Laser Optics

    Received: May. 24, 2018

    Accepted: Jun. 14, 2018

    Published Online: Aug. 1, 2019

    The Author Email: Yanhua Lu (luyanhua@caep.cn)

    DOI:10.3788/LOP55.121401

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