Researching | Organic-inorganic halide perovskites for memristors

Journal of Semiconductors, Volume. 44, Issue 9, 091604(2023)

Organic-inorganic halide perovskites for memristors

Memoona Qammar^*, Bosen Zou^*, and Jonathan E. Halpert^*

Author Affiliations

Department of Chemistry, Hong Kong University of Science and Technology (HKUST), Clear Water Bay Road, Kowloon 999077, Hong Kong SAR, China

show less

Full Text Get PDF

Figures&Tables (6)

References (62)

Paper Information

References(62)

[1] L Chua. Memristor-The missing circuit element. IEEE Trans Circuit Theory, 18, 507(1971).

[2] T W Hickmott. Low-frequency negative resistance in thin anodic oxide films. J Appl Phys, 33, 2669(1962).

[3] D B Strukov, G S Snider, D R Stewart et al. The missing memristor found. Nature, 453, 80(2008).

[4] L Chua. Resistance switching memories are memristors. Handbook of memristor networks, 197(2019).

[5] S Kim, C Du, P Sheridan et al. Experimental demonstration of a second-order memristor and its ability to biorealistically implement synaptic plasticity. Nano Lett, 15, 2203(2015).

[6] W B Chen, L K Song, S B Wang et al. Essential characteristics of memristors for neuromorphic computing. Adv Elect Materials, 9, 2200833(2023).

[7] M E Cryer, H Fiedler, J E Halpert. Photo-electrosensitive memristor using oxygen doping in HgTe nanocrystal films. ACS Appl Mater Interfaces, 10, 18927(2018).

[8] Z J Hu, F Cao, T T Yan et al. In situ vulcanization synthesis of CuInS2 nanosheet arrays for a memristor with a high on–off ratio and low power consumption. J Mater Chem C, 11, 244(2023).

[9] P Aabel, S Sai Guru Srinivasan, R Amiruddin et al. Bi-polar switching properties of FTO/CZTS/Ag device. J Mater Sci Mater Electron, 34, 1(2023).

[10] Y Li, Y P Zhong, L Xu et al. Ultrafast synaptic events in a chalcogenide memristor. Sci Rep, 3, 1619(2013).

[11] H R Hu, A Scholz, Y Liu et al. A fully inkjet-printed unipolar metal oxide memristor for nonvolatile memory in printed electronics. IEEE Trans Electron Devices, 70, 3051(2023).

[12] K Sato, Y Hayashi, N Masaoka et al. High-temperature operation of gallium oxide memristors up to 600 K. Sci Rep, 13, 1(2023).

[13] P Basnet, E C Anderson, F F Athena et al. Asymmetric resistive switching of bilayer HfOx/AlOy and AlOy/HfOx memristors: The oxide layer characteristics and performance optimization for digital set and analog reset switching. ACS Appl Electron Mater, 5, 1859(2023).

[14] M Prezioso, F Merrikh-Bayat, B D Hoskins et al. Training and operation of an integrated neuromorphic network based on metal-oxide memristors. Nature, 521, 61(2015).

[15] Y H Wu, H Y Huang, C Xu et al. The FAPbI3 perovskite memristor with a PMMA passivation layer as an artificial synapse. Appl Phys A, 129, 1(2023).

[16] Z C Guo, R Xiong, Y Y Zhu et al. High-performance and humidity robust multilevel lead-free all-inorganic Cs3Cu2Br5 perovskite-based memristors. Appl Phys Lett, 122, 053502(2023).

[17] Z H Liu, P P Cheng, R Y Kang et al. Photo-enhanced resistive switching effect in high-performance MAPbI3 memristors. Adv Materials Inter, 10, 2201513(2023).

[18] M A Green, A Ho-Baillie, H J Snaith. The emergence of perovskite solar cells. Nat Photonics, 8, 506(2014).

[19] A S R Bati, Y L Zhong, P L Burn et al. Next-generation applications for integrated perovskite solar cells. Commun Mater, 4, 1(2023).

[20] D W DeQuilettes, W Zhang, V M Burlakov et al. Photo-induced halide redistribution in organic–inorganic perovskite films. Nat Commun, 7, 1(2016).

[21] Z G Xiao, Y B Yuan, Y C Shao et al. Giant switchable photovoltaic effect in organometal trihalide perovskite devices. Nat Mater, 14, 193(2015).

[22] C Zhang, Y Li, C L Ma et al. Recent progress of organic–inorganic hybrid perovskites in RRAM, artificial synapse, and logic operation. Small Sci, 2, 2100086(2022).

[23] C Gu, J S Lee. Flexible hybrid organic–inorganic perovskite memory. ACS Nano, 10, 5413(2016).

[24] X J Zhu, J H Lee, W D Lu. Perovskite films: Iodine vacancy redistribution in organic-inorganic halide perovskite films and resistive switching effects. Adv Mater, 29, 1700527(2017).

[25] D J Kim, Y J Tak, W G Kim et al. Resistive switching properties through iodine migrations of a hybrid perovskite insulating layer. Adv Mater Interfaces, 4, 1601035(2017).

[26] K Yan, M Peng, X Yu et al. High-performance perovskite memristor based on methyl ammonium lead halides. J Mater Chem C, 4, 1375(2016).

[27] E Yoo, M Q Lyu, J H Yun et al. Bifunctional resistive switching behavior in an organolead halide perovskite based Ag/CH3NH3PbI3−xClx/FTO structure. J Mater Chem C, 4, 7824(2016).

[28] W Wang, J Q Xu, H L Ma et al. Insertion of nanoscale AgInSbTe layer between the Ag electrode and the CH3NH3PbI3 electrolyte layer enabling enhanced multilevel memory. ACS Appl Nano Mater, 2, 307(2019).

[29] Y M Sun, M Q Tai, C Song et al. Competition between metallic and vacancy defect conductive filaments in a CH3NH3PbI3-based memory device. J Phys Chem C, 122, 6431(2018).

[30] F C Zhou, Y H Liu, X P Shen et al. Low-voltage, optoelectronic CH3NH3PbI3–x Clx memory with integrated sensing and logic operations. Adv Funct Mater, 28, 1800080(2018).

[31] E J Yoo, M Q Lyu, J H Yun et al. Resistive switching behavior in organic-inorganic hybrid CH3NH3PbI3–xClx Perovskite for resistive random access memory devices. Adv Mater, 27, 6170(2015).

[32] H M Cai, G K Ma, Y L He et al. A remarkable performance of CH3NH3PbI3 perovskite memory based on passivated method. Org Electron, 58, 301(2018).

[33] H J Gogoi, A T Mallajosyula. Enhancing the switching performance of CH3NH3PbI3 memristors by the control of size and characterization parameters. Adv Elect Materials, 7, 2100472(2021).

[34] W H Qian, X F Cheng, J Zhou et al. Lead-free perovskite MASnBr3-based memristor for quaternary information storage. InfoMat, 2, 743(2020).

[35] Z G Xiao, J S Huang. Energy-efficient hybrid perovskite memristors and synaptic devices. Adv Electron Mater, 2, 1600100(2016).

[36] S Poddar, Y T Zhang, Y Y Zhu et al. Optically tunable ultra-fast resistive switching in lead-free methyl-ammonium bismuth iodide perovskite films. Nanoscale, 13, 6184(2021).

[37] J Y Seo, J Choi, H S Kim et al. Wafer-scale reliable switching memory based on 2-dimensional layered organic–inorganic halide perovskite. Nanoscale, 9, 15278(2017).

[38] H Tian, L F Zhao, X F Wang et al. Extremely low operating current resistive memory based on exfoliated 2D perovskite single crystals for neuromorphic computing. ACS Nano, 11, 12247(2017).

[39] D Lee, B Hwang, J S Lee. Impact of grain sizes on programmable memory characteristics in two-dimensional organic–inorganic hybrid perovskite memory. ACS Appl Mater Interfaces, 11, 20225(2019).

[40] H Kim, M J Choi, J M Suh et al. Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109. NPG Asia Mater, 12, 21(2020).

[41] C Muthu, S Agarwal, A Vijayan et al. Hybrid perovskite nanoparticles for high-performance resistive random access memory devices: Control of operational parameters through chloride doping. Adv Mater Interfaces, 3, 1600092(2016).

[42] K Y Yang, F S Li, C P Veeramalai et al. A facile synthesis of CH3NH3PbBr3 perovskite quantum dots and their application in flexible nonvolatile memory. Appl Phys Lett, 110, 083102(2017).

[43] B Hwang, J S Lee. A strategy to design high-density nanoscale devices utilizing vapor deposition of metal halide perovskite materials. Adv Mater, 29, 1701048(2017).

[44] B Hwang, C Gu, D Lee et al. Effect of halide-mixing on the switching behaviors of organic-inorganic hybrid perovskite memory. Sci Rep, 7, 43794(2017).

[45] X H Zhang, X N Zhao, X Y Shan et al. Humidity effect on resistive switching characteristics of the CH3NH3PbI3 memristor. ACS Appl Mater Interfaces, 13, 28555(2021).

[46] X F Cheng, W H Qian, J Wang et al. Environmentally robust memristor enabled by lead-free double perovskite for high-performance information storage. Small, 15, 1905731(2019).

[47] R A John, N Yantara, Y F Ng et al. Ionotronic halide perovskite drift-diffusive synapses for low-power neuromorphic computation. Adv Mater, 30, 1805454(2018).

[48] S B Shivarudraiah, N Tewari, M Ng et al. Optically clear films of formamidinium lead bromide perovskite for wide-band-gap, solution-processed, semitransparent solar cells. ACS Appl Mater Interfaces, 13, 37223(2021).

[49] H Patil, H Kim, K D Kadam et al. Flexible organic–inorganic halide perovskite-based diffusive memristor for artificial nociceptors. ACS Appl Mater Interfaces, 15, 13238(2023).

[50] S Poddar, Y T Zhang, L L Gu et al. Down-scalable and ultra-fast memristors with ultra-high density three-dimensional arrays of perovskite quantum wires. Nano Lett, 21, 5036(2021).

[51] X W Guan, T Wan, L Hu et al. A solution-processed all-perovskite memory with dual-band light response and tri-mode operation. Adv Funct Materials, 32, 2110975(2022).

[52] M Kulbak, S Gupta, N Kedem et al. Cesium enhances long-term stability of lead bromide perovskite-based solar cells. J Phys Chem Lett, 7, 167(2016).

[53] Q V Le, J W Lee, W Sohn et al. Low temperature solution-processable cesium lead bromide microcrystals for light conversion. Cryst Growth Des, 18, 3161(2018).

[54] X W Guan, Z H Lei, X C Yu et al. Low-dimensional metal-halide perovskites as high-performance materials for memory applications. Small, 18, 2203311(2022).

[55] L Hu, Q Zhao, S J Huang et al. Flexible and efficient perovskite quantum dot solar cells via hybrid interfacial architecture. Nat Commun, 12, 466(2021).

[56] J Yin, P Maity, R Naphade et al. Tuning hot carrier cooling dynamics by dielectric confinement in two-dimensional hybrid perovskite crystals. ACS Nano, 13, 12621(2019).

[57] J Kim, L Hu, H J Chen et al. P-type charge transport and selective gas sensing of all-inorganic perovskite nanocrystals. ACS Mater Lett, 2, 1368(2020).

[58] X F Cheng, X Hou, J Zhou et al. Pseudohalide-induced 2D (CH3NH3)2PbI2(SCN)2 perovskite for ternary resistive memory with high performance. Small, 14, 1703667(2018).

[59] J Zhao, S J Li, W C Tong et al. Light-induced anomalous resistive switches based on individual organic-inorganic halide perovskite micro-/ nanofibers. Adv Electron Mater, 4, 1800206(2018).

[60] T H Jiang, Z B Shao, H Fang et al. High-performance nanofloating gate memory based on lead halide perovskite nanocrystals. ACS Appl Mater Interfaces, 11, 24367(2019).

[61] J Q Yang, R P Wang, Z P Wang et al. Leaky integrate-and-fire neurons based on perovskite memristor for spiking neural networks. Nano Energy, 74, 104828(2020).

[62] Y T Zhang, S Poddar, H Huang et al. Three-dimensional perovskite nanowire array–based ultrafast resistive RAM with ultralong data retention. Sci Adv, 7, eabg3788(2021).

Tools

Get Citation

Copy Citation Text

Memoona Qammar, Bosen Zou, Jonathan E. Halpert. Organic-inorganic halide perovskites for memristors[J]. Journal of Semiconductors, 2023, 44(9): 091604

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Articles

Received: Jun. 20, 2023

Accepted: --

Published Online: Oct. 25, 2023

The Author Email: Memoona Qammar (jhalpert@ust.hk), Bosen Zou (jhalpert@ust.hk), Jonathan E. Halpert (jhalpert@ust.hk)

DOI:10.1088/1674-4926/44/9/091604

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology