Fig. 1. Schematic diagram of carrier transition. (a) Single component RMG GeSn LED. (b) RMG GeSn LED array.

Fig. 2. (a) RMG GeSn LEDs array fabrication process flow chart. (b) Schematic drawing of GeSn LEDs.

Fig. 3. (a) XTEM image and selected-area electron diffraction (SAED) pattern of the GSOI strip. (b) High-resolution XTEM image of the GSOI strip.

Fig. 4. (a) Micro-Raman spectra of the single LED. The inset shows the scanning electron microscopy (SEM) image of the single LED. (b) Electroluminescence (EL) spectra at room temperature with different injection current. The inset shows current-voltage (I–V) characteristics of the single LED.

Fig. 5. (a) SEM image of GeSn LEDs arrays. (b) Current-voltage (I–V) characteristics of devices.

Fig. 6. Micro-Raman spectra of LEDs for A, B, C, D, and E: (a) C-LED; (b) BS-LED.

Fig. 7. Photoluminescence spectra of LEDs: (a) C-LED; (b) BS-LED. Experimental and theoretical bandgap of LEDs: (c) C-LED; (d) BS-LED.

Fig. 8. Electroluminescence (EL) spectra at room temperature with different injection current: (a) C-LED; (b) BS-LED. Inset shows the peak wavelength of EL.

Fig. 9. Injection current dependent integrated EL intensity and FWHM: (a) C-LED; (b) BS-LED.