Fig. 1. (a)–(e) Processing procedures of the LSG/CsPbBr3 PD; (f) schematic structure of the LSG/CsPbBr3 PD; (g) surface morphology of laser reduced GO with different laser powers under electron microscope view (10×40).

Fig. 2. (a) XRD pattern of the CsPbBr3; (b) Raman characterization of the GO and LSG; (c) absorption spectra of the LSG and LSG/CsPbBr3; (d) PL spectra of the LSG, LSG/CsPbBr3, and CsPbBr3; (e) surface and cross section SEM image of the LSG/CsPbBr3; (f) EDS spectrum of LSG/CsPbBr3.

Fig. 3. (a), (b) Photocurrent voltage (I–V) curves of the LSG and LSG/CsPbBr3 PDs under different 532 nm power densities irradiation; (c), (d) optical switching characteristics and time responses of the LSG PD and LSG/CsPbBr3 PD under 932.48  mW/cm2 power intensity at 532 nm laser.

Fig. 4. Optical-electrical response characteristics of the LSG/CsPbBr3 PD under different power densities of 532 nm illumination at 0 V bias voltage. (a) Optical switching characteristics of the device under different power intensities; (b) photoresponsivities and photocurrents curves as a function of the laser intensity Ee of the LSG/CsPbBr3 PD; (c), (d) D* and NEP curves as a function of the laser intensity Ee, respectively.

Fig. 5. (a) Temporal photocurrent responses of the LSG device under 1064 and 1177 nm illumination at 390  mW/cm2; (b) temporal photocurrent responses of the LSG device under 10.6 and 118 μm (2.52 THz) illumination at 390  mW/cm2; (c) temporal photocurrent responses of the LSG/CsPbBr3 device under 405, 532, and 1064 nm illumination at 390  mW/cm2; (d) temporal photocurrent responses of the LSG/CsPbBr3 device under 10.6 and 118 μm (2.52 THz) illumination at 390  mW/cm2; (e) multiwavelength optical switch photocurrent curves from 405 nm to 118 μm; (f) ultrabroadband R and NEP curves of the device with the wavelength range from 405 nm to 118 μm at 0 V bias voltage.

Fig. 6. (a) Mechanism schematic for PTE effect; (b) schematic of photocurrent generation process of the device; (c) temperature profile of active location under dark and 532 nm illumination; inset, infrared imaging temperature distribution map of the device under 532 nm illumination; (d) increased temperature profile of the device under 532 nm laser illumination; (e), (f) current voltage (I–V) characteristics of the device under 532 and 1177 nm laser irradiation, respectively; (g) photocurrent and temperature variation curves of the device under 532 nm laser illumination.

Fig. 7. (a) I–V curves of the LSG/CsPbBr3 device under 532 nm irradiation (Ee=58.28  mW/cm2) before and after bending with different bending states; (b) temporal photocurrent curves of the LSG/CsPbBr3 device before (solid lines) and after (dotted lines) a bending test for 1000 times under 532 nm laser illumination (Ee=58.28  mW/cm2) at 0 V voltage.