Journal of Inorganic Materials, Volume. 38, Issue 4, 445(2023)
Figures & Tables(8)
1. Schematic diagram of the IGZO-based neuromorphic transistor with different gate dielectrics
2. Leakage current curves and corresponding AFM images (inset) of monolayer gate dielectric and bilayer gate dielectric
3. Transfer characteristics and output characteristics of two kinds of dielectric devices
4. (a) Top micrograph, (b) transfer characteristics with different V G2 (from-2.0 V to 1.0 V) and (c) the V th with different V G2 of transistor
5. (a) Schematic diagram of biological synapse and their equivalent electrical circuit of the neuromorphic transistor, (b) EPSC responses under an electric pulse of 0.5 V, and (c) EPSC induced by electric pulses of different amplitudes for IGZO-based dual-gate transistor with stacked Al2O3/chitosan gate dielectrics
6. (a) Multi-pulse facilitation induced by eight successive electric pulse (0.5 V, 25 ms) and (b) ratio of A 8/A 1 plotted as a function of the time interval between the pulses for IGZO-based dual-gate transistor with stacked Al2O3/chitosan gate dielectrics
Table 1. Transistor parameters of IGZO-based transistors
View tableView in ArticleTable 1. Transistor parameters of IGZO-based transistors
Gate dielectric Ioff Ion/Ioff ratio Subthreshold swing/ (mV·decade-1) Hysteresis window/V Leakage current (VG=1.8 V)/nA μsat/ (cm2·V-1·s-1) Chitosan 2.92×10-9 1.06×105 98.8 1.10 66.4 18.0 Chitosan/Al2O3 4.20×10-11 2.20×106 78.3 3.73 1.3 20.9
Table 2. Energy consumption of the single EPSC peak in different artificial synaptic transistors
View tableView in ArticleTable 2. Energy consumption of the single EPSC peak in different artificial synaptic transistors
Structure VDS/V VG pulse EPSC/nA Energy consumption/(pJ·spike-1) Ref. Nanogranular SiO2/IZO 1.0 0.8 V, 20 ms 5000 105 [ 33 ]GO+Chitosan/IGZO 0.1 0.5 V, 20 ms 14 28 [ 34 ]Carbon Nanotube (CNT) 0.5 4.0 V, 1.0 ms 15 7.5 [ 35 ]Chitosan/IZO 0.1 0.5 V, 25 ms 2.6 6.5 [ 36 ]Chitosan/IWO 0.1 0.2 V, 20 ms 4.7 9.4 [ 37 ]Chitosan/IGZO 0.1 0.5 V, 20 ms 26 52 [ 38 ]Tungsten oxide 0.3 0.6 V, 70 ms 3.8 79 [ 39 ]Chitosan/ IGZO 0.1 0.5 V, 20 ms 24 48 This work Chitosan/Al2O3/IGZO 0.1 0.5 V, 20 ms 0.86 1.7 This work
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Jingyu WANG, Changjin WAN, Qing WAN.
Paper Information
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Received: Dec. 21, 2022
Accepted: --
Published Online: Oct. 17, 2023
The Author Email: Qing WAN (wanqing@nju.edu.cn)
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