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Journal of Synthetic Crystals, Volume. 51, Issue 11, 1815(2022)

Epitaxial Growth of GaAs on Si (111) Controlled by Al/AlAs Interlayer

CHANG Menglin1,2、*, FAN Xing1,2, ZHANG Weiwei1,2, YAO Jinshan1,2, PAN Rui1,2, LI Chen1,2,3, and LU Hong1,2,3
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    CHANG Menglin, FAN Xing, ZHANG Weiwei, YAO Jinshan, PAN Rui, LI Chen, LU Hong. Epitaxial Growth of GaAs on Si (111) Controlled by Al/AlAs Interlayer[J]. Journal of Synthetic Crystals, 2022, 51(11): 1815

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    Paper Information

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    Received: Jun. 2, 2022

    Accepted: --

    Published Online: Jan. 3, 2023

    The Author Email: CHANG Menglin (13280886557@163.com)

    DOI:

    CSTR:32186.14.

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology