Journal of Semiconductors, Volume. 46, Issue 8, 082502(2025)
Effect of grain size on the resistivity of polycrystalline 3C-SiC
Figures & Tables(7)
Fig. 1. (Color online) EBSD results of (a) unintentionally doped and (b) nitrogen doped samples.
Fig. 2. (Color online) (a) The relationship between resistivity and doping concentration, (b) TEM results of the non-intentionally doped high-resistivity sample.
Fig. 3. (Color online) (a) XRD and (b) Raman tests of the sample at doping concentration 1018 cm−3.
Fig. 4. (Color online) The EBSD test results of the unintentionally doped samples (a)−(h), ranked by resistivity from high to low.
Fig. 5. (Color online) Grain size calculation results of the unintentionally doped samples (a)−(h), ranked by resistivity from high to low.
Fig. 6. (Color online) (a) EBSD data and (b) grain size of the nitrogen-doped sample.
Fig. 7. (Color online) The relationship between the grain size and resistivity of the unintentionally doped sample.
Tools
Get Citation
Copy Citation Text
Guo Li, Lei Ge, Mingsheng Xu, Jisheng Han, Xiangang Xu. Effect of grain size on the resistivity of polycrystalline 3C-SiC[J]. Journal of Semiconductors, 2025, 46(8): 082502
Paper Information
Category: Research Articles
Received: Feb. 14, 2025
Accepted: --
Published Online: Aug. 27, 2025
The Author Email: Lei Ge (LGe)
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20