[1] [1] Woggon U. Optical Properties of Semiconductor Quantum Dots[M]. Berlin: Springer-Verlag, 1997. 18～21

[3] [3] A. Ekimov. Growth and optical properties of semiconductor nanocrystals in a glass matrix[J]. J. Luminescence, 1996, 70: 1～20

[4] [4] R. Heitz, M. Veit, N. N. Ledentsov et al.. Energy relaxation by multiphonon process in InAs/GaAs quantum dots[J]. Phys. Rev. (B), 1997, 56(6): 10435～10445

[5] [5] Y. Toda, O. Moriwaki, M. Nishioka et al.. Efficient carrier relaxation mechanism in InGaAs/GaAs self-assembled quantum dots based on the existence of continuum states[J]. Phys. Rev. Lett., 1999, 82(20): 4114～4117

[6] [6] U. Woggon, F. Gindele, O. Wind et al.. Exchange interaction and phonon confinement in CdSe quantum dots[J]. Phys. Rev. (B), 1996, 54(3): 1506～1509

[9] [9] Ekimov A I, Hache F, Schanne-Klein M C et al.. Absorption and intensity-dependent photoluminescence measurements on CdSe quantum dots: assignment of the first electronic transitions[J]. J. Opt. Soc. Am. (B), 1993, 10(1): 100～107

[11] [11] Aggarwal R L, Willardson R K, Beer A C et al..Semiconductors and Semimetals[M]. New York: Academic Press, 1972. 151