Modeling of InAsSbP Blocking Barrier Grown by Liquid-Phase Epitaxy in InAs-Based Infrared Photodetector

Hongyu Lin; Hao Xie; Yang Wang; Hongbo Lu; Yan Sun; Shuhong Hu; Xin Chen; Ning Dai

doi:10.3788/AOS201939.0504002

Acta Optica Sinica, Volume. 39, Issue 5, 0504002(2019)

Modeling of InAsSbP Blocking Barrier Grown by Liquid-Phase Epitaxy in InAs-Based Infrared Photodetector

Hongyu Lin^1,2, Hao Xie^1,2, Yang Wang^1,2, Hongbo Lu^1,2, Yan Sun¹, Shuhong Hu^1、*, Xin Chen¹, and Ning Dai^1、*

¹ State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

² University of Chinese Academy of Sciences, Beijing 100049, China

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Hongyu Lin, Hao Xie, Yang Wang, Hongbo Lu, Yan Sun, Shuhong Hu, Xin Chen, Ning Dai. Modeling of InAsSbP Blocking Barrier Grown by Liquid-Phase Epitaxy in InAs-Based Infrared Photodetector[J]. Acta Optica Sinica, 2019, 39(5): 0504002

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Paper Information

Category: Detectors

Received: Oct. 25, 2018

Accepted: Jan. 21, 2019

Published Online: May. 10, 2019

The Author Email:

DOI:10.3788/AOS201939.0504002

Topics

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