Chinese Journal of Lasers, Volume. 26, Issue 3, 257(1999)

Minimum Excited Threshold in Electron Trapping Materials

[in Chinese]1,2, [in Chinese]1,2, [in Chinese]1,2, [in Chinese]1,2, [in Chinese]1,2, [in Chinese]1,2, and [in Chinese]1,2
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    References(8)

    [1] [1] J. Lindmayer. A new erasable optical memory. Solid State Technology, 1988, 31(8): 135~138

    [2] [2] S. Jutamulia, G. M. Storti, W. Seiderman et al.. Use of electron-trapping materials in optical signal processing. IV. Parallel incoherent image subtraction. Appl. Opt., 1993, 32(5): 743~745

    [3] [3] Z. Wen, N. H. Farhat, Z. J. Zhao. Dynamics of electron-trapping materials for use in optoelectronic neurocomputing. Appl. Opt., 1993, 32(35): 7251~7265

    [4] [4] Chen Shuchun, Dai Fengmei. Up-conversion and optical storage properties of SrS:Eu, Sm in PMMA. Chinese J. Lasers, 1993, B2(1): 67~69

    [10] [10] P. F. Curley, Ch. Spielmann, T. Brabec et al.. Operation of a femtosecond Ti:sapphire solitary laser in the vicinity of zero group-delay dispersion. Opt. Lett., 1993, 18(1): 54~56

    [12] [12] Chunfei Li, Lei Zhang, Miao Yang et al.. Dynamic and steady-state behaviors of reverse saturable absorption in metallophthalocyanine. Phys. Rev. A, 1994, 49(2): 1149~1157

    [14] [14] Xu Dalun. Streak Tubeson High Speed Photography. Beijing: Science Press, 1990. 221(in Chinese)

    [15] [15] Y. Tsuchiya. Picosecond streak camera and its applications. Picosecond, 1983, 14(6): 6

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Minimum Excited Threshold in Electron Trapping Materials[J]. Chinese Journal of Lasers, 1999, 26(3): 257

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    Paper Information

    Category: materials and thin films

    Received: Oct. 20, 1997

    Accepted: --

    Published Online: Aug. 9, 2006

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