Electronic and Optical Properties of Low-Concentration Ge Doping and Substitution of Sn and Ge for CsPbI<sub>3</sub>

Dengqi Zhang; Hanmin Tian; Quanmin He; Xiaoya Song; Wenfang Liu; Yuerong Wang

doi:10.3788/LOP221606

Laser & Optoelectronics Progress, Volume. 60, Issue 15, 1516002(2023)

Electronic and Optical Properties of Low-Concentration Ge Doping and Substitution of Sn and Ge for CsPbI₃

Dengqi Zhang¹, Hanmin Tian^1,2、*, Quanmin He¹, Xiaoya Song¹, Wenfang Liu¹, and Yuerong Wang¹

Author Affiliations

¹School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China

²Tianjin Key Laboratory of Electronic Materials and Device, Tianjin 300401, China

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Dengqi Zhang, Hanmin Tian, Quanmin He, Xiaoya Song, Wenfang Liu, Yuerong Wang. Electronic and Optical Properties of Low-Concentration Ge Doping and Substitution of Sn and Ge for CsPbI₃[J]. Laser & Optoelectronics Progress, 2023, 60(15): 1516002

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Paper Information

Category: Materials

Received: May. 16, 2022

Accepted: Jul. 7, 2022

Published Online: Aug. 11, 2023

The Author Email: Hanmin Tian (tianhanmin@hebut.edu.cn)

DOI:10.3788/LOP221606

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology