Laser & Optoelectronics Progress, Volume. 61, Issue 19, 1913003(2024)

Chalcogenide Photonic Integrated Chips(Invited)

Qiang Li1,2、*, Ruifeng Zhong1,2, Zhaohui Li1,2,4, and Jingshun Pan1,2,3
Author Affiliations
  • 1Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, Guangdong , China
  • 2State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, Guangdong , China
  • 3School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, Guangdong , China
  • 4Southern Marine Science and Engineering Guangdong Laboratory (Zhuhai), Zhuhai 519000, Guangdong , China
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    Figures & Tables(9)
    Optical properties of GeSbS material. (a) Measurement of transmittance window and refractive index of GeSbS bulk material[47]; (b) measurement of the change in the resonant frequency of GeSbS resonators with temperature for determination of thermal-optic coefficient (TOC)[48]
    Deposition and device fabrication based on GeSbS material. (a) Fabrication of 4 inch thin film based on GeSbS material; (b) uniformity of thin film thickness; (c) uniformity of thin film refractive index; (d) SEM image of fabricated waveguide structure; (e) fabricated micro-ring resonator device with racetrack waveguide coupling; (f) cross-sectional view of the waveguide device
    GeSbS photonic chip preparation technology. (a) Schematic of ChG thin film fabrication process; (b) on-chip device packaging with an array of optical fiber inputs and outputs; (c) microring resonator structure with a high Q factor of 6.40×105; (d) distribution of Q factors for microring resonators; (e) distribution of loaded Q and intrinsic Q over the wavelength range of 1500‒1590 nm, with an average Q factor of 6.97×105
    Sensors based on different optical principles. (a) Microscale suspended structure ultrasound sensor based on a micron-scale silicon chip[80]; (b) miniaturized ultrasound detector developed using SOI technology[81]; (c) silicon substrate waveguide design with air-gap acoustic enhancement[82]; (d) silicon-based platform with PDMS acoustic enhancement[83]
    Research on the performance of on-chip ultrasonic detector based on ChG. (a) Fabrication process of on-chip ultrasound detectors based on ChG[22]; (b) on-chip ChG microring resonator ultrasound detector with a Q factor of 1.48×106[22]; (c) design of a cascaded structure with 3 on-chip ultrasound detectors based on ChG[22]; (d) parallel spectral and ultrasound signal demodulation from the three ultrasound detectors[22]; (e) fabrication process of a suspended ChG microring resonator[99]; (f) fabricated suspended ChG microring resonator with an optical quality factor of 1.1×106[99]
    Application of photoacoustic tomography using a ChG-based ultrasound detector array[100]. (a) Conceptual diagram of the imaging process; (b) schematic of a digital optical frequency comb system for parallel spectral demodulation of the array devices; (c) ChG-based ultrasound detectors and their array structure; (d) physical ultrasound detector array after fiber-coupled packaging; (e) photoacoustic image of a leaf vein; (f) photoacoustic imaging results of a 7-day-old zebrafish; (g) photoacoustic imaging results of a 21-day-old zebrafish
    Acousto-optic modulators of different structures. (a) Schematic of an on-chip push-pull acousto-optic modulator[130]; (b) simulation of acoustic surface wave mode field[129]; (c) on-chip aluminum nitride (AlN) isolator based on the acousto-optic effect[131]; (d) fully integrated acousto-optic modulator optical image using surface acoustic wave (SAW) and Lamb wave techniques[122]; (e) cross-section of an integrated acousto-optic modulator with a SiO2-clad silicon rib waveguide and an AlN thin film surface acoustic wave[126]; (f) (g) acousto-optic modulators based on different structural designs of on-chip AlN thin films[127-128]
    Related research of ChG in other fields. (a) Advances in research on flexible thin films[134-135]; (b) progress in on-chip devices based on chalcogenide materials for mid-infrared gas detection[137]; (c) optimization studies of on-chip devices based on chalcogenide materials for mid-infrared gas detection[138]
    • Table 1. Some key parameters of ChGs and other common materials in integrated photonics

      View table

      Table 1. Some key parameters of ChGs and other common materials in integrated photonics

      MaterialRefractive index@1550 nmLoss /(dB/cm)Photoelastic coefficientYoung modulus/GPaThermo-optic coefficient/K-1
      Si3.470.1449p11=-0.094,p12=0.01750131511.84×10-4[37
      SiN252<0.1p12=-0.047533102.9×10-5
      LiNbO32.21(no),2.14(ne50<0.1p11=-0.026, p12=0.09502103.3×10-5
      AlN2.12(no),2.16(ne500.1452p11=-0.1,p12=-0.027503306.0×10-5[54
      Al2O31.639550.155p11=-0.23, p12=-0.033500.680×10-4[56
      As2S32.3570.1p11=0.308, p12=0.2995875.79
      GeSbSe2.33590.55.66×10-5[60
      GeAsSe2.420.96117.89362‒3×10-5
      GeSbTe3.5‒5.56236.851-6.91×10-4[6
      GeSbS2.284864<0.264p11p12≈0.2384831.9483.1×10-5[47
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    Qiang Li, Ruifeng Zhong, Zhaohui Li, Jingshun Pan. Chalcogenide Photonic Integrated Chips(Invited)[J]. Laser & Optoelectronics Progress, 2024, 61(19): 1913003

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    Paper Information

    Category: Integrated Optics

    Received: Aug. 1, 2024

    Accepted: Aug. 29, 2024

    Published Online: Oct. 16, 2024

    The Author Email:

    DOI:10.3788/LOP241784

    CSTR:32186.14.LOP241784

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