Laser & Optoelectronics Progress, Volume. 62, Issue 7, 0714003(2025)

Top-Emitting Vertical-Cavity Surface-Emitting Lasers for Substrate Heat Dissipation

Chunpeng Yang*, Bifeng Cui, Jingyu Feng, Zhongbiao Chen, Xiangrui Zheng, and Bozhao Yan
Author Affiliations
  • Key Laboratory of Optoelectronics Technology, Ministry of Education, College of Information Science and Technology, Beijing University of Technology, Beijing 100124, China
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    Figures & Tables(9)
    Top-emitting VCSEL with heat dissipation hole
    P-I curves of 850 nm VCSEL with and without heat dissipation hole
    Lattice temperature of an 850 nm VCSEL with and without heat dissipation hole at different operating currents. (a) (b) Operating current is 16.3 mA; (c) (d) operating current is 17.8 mA
    Maximum lattice temperature of an 850 nm VCSEL with and without a heat dissipation hole with the operating current
    Thermal resistance of an 850 nm VCSEL with and without a heat dissipation hole with operating current
    Front image of chip after sputtering electrode
    850 nm VCSEL power test with and without heat dissipation hole
    Lithographic layout for back lithography (six in a group)
    Slope efficiency of 850 nm VCSEL with different shapes of heat dissipation hole and without heat dissipation hole
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    Chunpeng Yang, Bifeng Cui, Jingyu Feng, Zhongbiao Chen, Xiangrui Zheng, Bozhao Yan. Top-Emitting Vertical-Cavity Surface-Emitting Lasers for Substrate Heat Dissipation[J]. Laser & Optoelectronics Progress, 2025, 62(7): 0714003

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Sep. 24, 2024

    Accepted: Nov. 15, 2024

    Published Online: Mar. 17, 2025

    The Author Email:

    DOI:10.3788/LOP242026

    CSTR:32186.14.LOP242026

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