Laser & Optoelectronics Progress, Volume. 62, Issue 15, 1504001(2025)
Lateral Photovoltaic Devices of WSe2/Si Heterojunctions (Invited)
Fig. 1. Thin film characterization. (a) XRD pattern of the WSe2 thin film; (b) Raman spectra of the WSe2 thin film and the powder; (c)(d) XPS diagrams of W and Se elements of the WSe2 film
Fig. 2. LPV properties of heterostructures. (a) Longitudinal I-V curve of the WSe₂/p-Si heterostructure, insets show the longitudinal I-V curve of the WSe₂/n-Si heterostructure and the corresponding test circuit connection diagram; (b)(c) temperature dependence of LPV for WSe₂/p-Si and WSe₂/n-Si heterostructures, insets illustrate the test circuit connection diagram and energy band structure of the heterostructures; (d) laser power dependence of LPV for WSe₂/p-Si and WSe₂/n-Si heterostructures
Fig. 3. Lateral photovoltaic response of heterojunction. (a) Dependence of lateral time-dependent response on temperature of WSe₂/p-Si heterojunctions, the illustration is a test circuit diagram; (b) dependence of lateral time-dependent response on temperature of WSe₂/n-Si heterojunctions, the illustration is a test circuit diagram
Fig. 4. Image sensing of WSe2/p-Si heterojunction. (a) Image sensing with an incident laser power of 16.7 mW·cm-1; (b) image sensing with an incident laser power of 1.67 mW·cm-1
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Miaoran Kang, Lingli Zhang, Shuo Gong, Yining Tai, Xianjie Wang. Lateral Photovoltaic Devices of WSe2/Si Heterojunctions (Invited)[J]. Laser & Optoelectronics Progress, 2025, 62(15): 1504001
Category: Detectors
Received: Apr. 11, 2025
Accepted: May. 22, 2025
Published Online: Aug. 11, 2025
The Author Email: Xianjie Wang (wangxianjie@hit.edu.cn)
CSTR:32186.14.LOP250986