Characteristics of L-Band Erbium Doped Fiber Amplifier Gain Spectra

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Chinese Journal of Lasers, Volume. 28, Issue 11, 1013(2001)

[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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References(3)

[1] [1] Y. Sun, J. W. Sulhoff, A. K. Srivastava et al.. 80 nm ultra-wideband erbium-doped silica fibre amplifier. Electron. Lett., 1997, 33(23):1965～1967

[2] [2] C. R. Giles, E. Desurvire. Modeling erbium-doped fiber amplifiers. J. Lightwave Technol., 1991, 9(2):271～283

[3] [3] Hirotaka Ono, Makoto Yamada, Terutoshi Kanamori et al.. 1.58-μm band gain-flattened erbium-doped fiber amplifiers for WDM transmission systems. J. Lightwave Technol., 1999, 17(3):490～496

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Characteristics of L-Band Erbium Doped Fiber Amplifier Gain Spectra[J]. Chinese Journal of Lasers, 2001, 28(11): 1013

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Paper Information

Category: Optical communication

Received: Sep. 11, 2000

Accepted: --

Published Online: Aug. 10, 2006

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Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology