Journal of Semiconductors, Volume. 40, Issue 7, 072901(2019)
Electrically driven uniaxial stress device for tuning in situ semiconductor quantum dot symmetry and exciton emission in cryostat
Fig. 1. (Color online) (a) Photograph of a polished metal sheet with a sample on the center, where metal sheet as a flexible substrate of absorbed sample. (b) Photograph of the electrically driven uniaxial stress device fixed on the cold chamber of cryostat.
Fig. 2. (Color online) (a) PL intensity ratio
Fig. 3. (Color online) (a) Stress-dependent spectra of GaAs at 15 K, measured for applied uniaxial tensile stress from zero to 879.5 MPa. (b) PL peak energy as a function of tensile (black solid squares) and release (red solid circles) stresses, respectively.
Fig. 4. (Color online) (a) PL spectra for X*, X and XX in QD measured under the tensile stress of 0, 104.4, 201.2, 321.7, 391.9, 500.7, 614.2 and 717.6 MPa, respectively. (b) The obtained stress coefficients for X*, X and XX are –20.19, –20.26 and –18.93
Fig. 5. (Color online) (a) FSS change of the exciton in single QD as a function of strain applied along (100) and (010) directions, respectively. (b) Charged exciton decay times of single QD as a function of strain applied along (100) and (010) directions, respectively.
Fig. 6. (Color online) (a)–(d) Stress-dependent spectra of single QD at 15 K. As shown in (b) and (d), PL spectra of the horizontal (red lines) and vertical (black lines) polarized components of exciton and biexciton overlap at the stresses of 491.8 and 960.4 MPa, respectively. At 698.3 MPa as shown in (c), across generation color coincidence for XX and X transition energies is achieved. (e)–(h) Level schemes showing the XX-X cascade emissions accordingly.
Fig. 7. (Color online) Stress-dependent PL spectra of monolayer MoS2 at 15 K, corresponding motor precession from 0 to 330 000 steps.
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Hao Chen, Xiuming Dou, Kun Ding, Baoquan Sun. Electrically driven uniaxial stress device for tuning in situ semiconductor quantum dot symmetry and exciton emission in cryostat[J]. Journal of Semiconductors, 2019, 40(7): 072901
Category: Articles
Received: May. 4, 2019
Accepted: --
Published Online: Sep. 18, 2021
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