Journal of Synthetic Crystals, Volume. 54, Issue 6, 960(2025)
Fine Modulation of Internal Point Defects in CZT Crystals Grown by the Traveling Heater Method
Figures & Tables(13)
Fig. 2. PICTS of samples after Cd-vapor annealing for different time
Fig. 3. Distribution of point defects in CZT for different annealing time
Fig. 4. Evolution of point defects in Te-rich CZT during the Cd annealing process
Fig. 5. Low-temperature PL emission spectra of samples after Cd-vapor annealing for different time
Fig. 6. Rising edges of the α-particle-induced preamplifier output of samples after Cd-vapor annealing at different time
Fig. 7. Total concentration of point defects， electron mobility and charge collection efficiency of samples after Cd annealing for different time
Fig. 8. Distribution of the internal electric field of samples after Cd annealing for different time
Fig. 9. Variation of the resistivity of CdZnTe with annealing time in different atmospheres
Table 1.
Annealing parameters View tableView in ArticleTable 1.
Annealing parameters Annealing atmosphere Tsources/℃ Tsample/℃ Annealing time/h Sample label Saturated-Cd vapor — — 0 CZT-1 600 650 1 CZT-2 600 650 3 CZT-3 600 650 6 CZT-4 600 650 24 CZT-5 Saturated-Te vapor 600 650 72 CZT-5（72Te） 600 650 150 CZT-5（150Te）
Table 2.
Point defect parameters of samples after Cd annealing for different time View tableView in ArticleTable 2.
Point defect parameters of samples after Cd annealing for different time Trap type Trap name ET/eV σn/cm2 NT/cm-3，
CZT-1
NT/cm-3，
CZT-2
NT/cm-3，
CZT-3
NT/cm-3，
CZT-4
NT/cm-3，
CZT-5
Acceptor （InCd+-VCd2-）- 0.15 2.95×10-24 4.37×1013 3.89×1013 1.23×1013 7.13×1012 4.54×1012 VCd2- 0.38 4.76×10-20 7.35×1012 2.68×1012 9.85×1011 5.33×1011 — Donor Cdi2+ 0.55 5.82×10-19 — — — — 4.49×1013 TeCd2+ 0.74 9.34×10-16 4.47×1013 4.28×1013 3.23×1013 1.56×1013 4.91×1012 Total defect concentration 9.58×1013 8.44×1013 4.56×1013 2.33×1013 5.44×1013
Table 3.
Area ratio of D<sub>1</sub> and D<sub>2</sub> of samples after Cd-vapor annealing for different time View tableView in ArticleTable 3.
Area ratio of D<sub>1</sub> and D<sub>2</sub> of samples after Cd-vapor annealing for different time Ratio CZT-1 CZT-2 CZT-3 CZT-4 CZT-5 28.82 20.25 14.95 11.67 4.87
Table 4.
Electron mobility and charge collection efficiency of samples after Cd annealing for different time View tableView in ArticleTable 4.
Electron mobility and charge collection efficiency of samples after Cd annealing for different time Sample number CZT-1 CZT-2 CZT-3 CZT-4 μ/（cm2·V-1·s-1） 548 645 670 697 η/% 52 71 85 100
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Chao YU, Bo ZHANG, Qiqi WANG, Xi WANG, Yunan HU, Xiaoyan LIANG, Jijun ZHANG, Jiahua MIN, Linjun WANG. Fine Modulation of Internal Point Defects in CZT Crystals Grown by the Traveling Heater Method[J]. Journal of Synthetic Crystals, 2025, 54(6): 960
Paper Information
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Received: Dec. 23, 2024
Accepted: --
Published Online: Jul. 8, 2025
The Author Email: Xiaoyan LIANG (xxlyy@shu.edu.cn)
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