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Photonics Research, Volume. 7, Issue 4, B1(2019)

Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes

Zi-Hui Zhang1,2, Jianquan Kou1, Sung-Wen Huang Chen3, Hua Shao1, Jiamang Che1, Chunshuang Chu1, Kangkai Tian1, Yonghui Zhang1, Wengang Bi1, and Hao-Chung Kuo3,4、*
Author Affiliations
  • 1Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology, Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, China
  • 2e-mail: zh.zhang@hebut.edu.cn
  • 3Department of Photonics and Institute of Electro-Optical Engineering, Taiwan Chiao Tung University, Hsinchu 30010, China
  • 4Department of Electrical Engineering and Computer Sciences and TBSI, University of California at Berkeley, Berkeley, California 94720, USA
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    Zi-Hui Zhang, Jianquan Kou, Sung-Wen Huang Chen, Hua Shao, Jiamang Che, Chunshuang Chu, Kangkai Tian, Yonghui Zhang, Wengang Bi, Hao-Chung Kuo, "Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes," Photonics Res. 7, B1 (2019)

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    Paper Information

    Category: Semiconductor UV Photonics

    Received: Dec. 12, 2018

    Accepted: Feb. 20, 2019

    Published Online: Apr. 11, 2019

    The Author Email: Hao-Chung Kuo (hckuo@faculty.nctu.edu.tw)

    DOI:10.1364/prj.7.0000b1

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology