Chinese Journal of Lasers, Volume. 51, Issue 8, 0801001(2024)

High-Beam-Quality High-Power Vertical-Cavity Surface-Emitting Laser

Guanxin Yan and Yongqin Hao*
Author Affiliations
  • State Key Laboratory of High Power Semiconductor Laser,Changchun University of Science and Technology,Changchun 130022, Jilin , China
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    Figures & Tables(8)
    VCSEL light field intensity distribution. (a) Aperture of 15 μm; (b) aperture of 300 μm
    Schematics of VCSEL structures. (a) Traditional structure; (b) multi-ring cavity structure
    Light field distributions of multi-ring cavity VCSELs with different PLEA. (a) 50%; (b) 75%; (c) 67%
    VCSEL preparation process
    Near-field test results of multi-ring cavity VCSELs with different PLEA (injection current is 0.6 A). (a) 50%; (b) 75%; (c) 67%; (d) 100%
    Far-field distribution and spectrum of novel structure VCSEL. (a) Far-field distribution; (b) spectrum
    Beam radius versus beam propagation distance
    P-I curves of VCSELs with different structures
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    Guanxin Yan, Yongqin Hao. High-Beam-Quality High-Power Vertical-Cavity Surface-Emitting Laser[J]. Chinese Journal of Lasers, 2024, 51(8): 0801001

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    Paper Information

    Category: laser devices and laser physics

    Received: Jun. 30, 2023

    Accepted: Sep. 19, 2023

    Published Online: Apr. 17, 2024

    The Author Email: Hao Yongqin (hyq72081220@aliyun.com)

    DOI:10.3788/CJL230977

    CSTR:32183.14.CJL230977

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