Microelectronics, Volume. 51, Issue 3, 404(2021)
An Enhanced HEMT Using P-GaN Gate Combined with Recessed-Gate Technology
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QIAO Jie, FENG Quanyuan. An Enhanced HEMT Using P-GaN Gate Combined with Recessed-Gate Technology[J]. Microelectronics, 2021, 51(3): 404
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Received: Jul. 10, 2020
Accepted: --
Published Online: Mar. 11, 2022
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