Journal of Inorganic Materials, Volume. 39, Issue 11, 1228(2024)

CaBi2Nb2O9 Ferroelectric Thin Films: Modulation of Growth Orientation and Properties

Guanyuan REN1,2, Yiguan LI2, Donghai DING1、*, Ruihong LIANG2, and Zhiyong ZHOU2、*
Author Affiliations
  • 11. College of Materials Science and Engineering, Xi'an University of Architecture and Technology, Xi'an 710055, China
  • 22. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
  • show less
    References(25)

    [1] SETTER N, DAMJANOVIC D, ENG L et al. Ferroelectric thin films: review of materials, properties, and applications[J]. Journal of Applied Physics, 051606(2006).

    [2] SCOTT J F. Applications of modern ferroelectrics[J]. Science, 954(2007).

    [4] PARK B H, KANG B S, BU S D et al. Lanthanum-substituted bismuth titanate for use in non-volatile memories[J]. Nature, 682(1999).

    [5] ZHOU Z, CHEN T, DONG X. Research progress of perovskite layer structured piezoelectric ceramics with super high Curie temperature[J]. Journal of Inorganic Materials, 251(2018).

    [6] DE ARAUJO C A P, CUCHIARO J D, MCMILLAN L D et al. Fatigue-free ferroelectric capacitors with platinum electrodes[J]. Nature, 627(1995).

    [7] ZHANG Y, LI C, LI J et al. Enhancing speed and stability of polarization reversal in predominantly a/b-axes-oriented Bi4Ti3O12 thin films deposited on Pt/Ti/SiO2/Si[J]. Physica Status Solidi (RRL) - Rapid Research Letters, 1900370(2019).

    [8] BLAKE S, FALCONER M, MCREEDY M et al. Cation disorder in ferroelectric Aurivillius phases of the type Bi2ANb2O9 (A = Ba, Sr, Ca)[J]. Journal of Materials Chemistry, 1609(1997).

    [9] IRIE H, MIYAYAMA M, KUDO T. Structure dependence of ferroelectric properties of bismuth layer-structured ferroelectric single crystals[J]. Journal of Applied Physics, 4089(2001).

    [10] ISUPOV V A. Two types of ABi2B2O9 layered perovskite-like ferroelectrics[J]. Inorganic Materials, 976(2006).

    [11] WITHERS R L, THOMPSON J G, RAE A D. The crystal chemistry underlying ferroelectricity in Bi4Ti3O12, Bi3TiNbO9, and Bi2WO6[J]. Journal of Solid State Chemistry, 404(1991).

    [12] NEWNHAM R E, WOLFE R W, DORRIAN J F. Structural basis of ferroelectricity in the bismuth titanate family[J]. Materials Research Bulletin, 1029(1971).

    [13] SHIMAKAWA Y, KUBO Y, NAKAGAWA Y et al. Crystal structure and ferroelectric properties of ABi2Ta2O9 (A = Ca, Sr, and Ba)[J]. Physical Review B, 6559(2000).

    [14] SIMOES A Z, RIES A, RICCARDI C S et al. High Curie point CaBi2Nb2O9 thin films: a potential candidate for lead-free thin-film piezoelectrics[J]. Journal of Applied Physics, 299(2006).

    [15] SIMOES A Z, RAMIREZ M A, RIES A et al. Microwave synthesis of calcium bismuth niobate thin films obtained by the polymeric precursor method[J]. Materials Research Bulletin, 1461(2006).

    [16] WANG Y L, OUYANG J. Orienting high Curie point CaBi2Nb2O9 ferroelectric ferroelectric films on Si at 500 ℃[J]. Ceramics International, 20818(2019).

    [17] AHN Y, JANG J, SON J Y. Ferroelectric properties of lead-free polycrystalline CaBi2Nb2O9 thin films on glass substrates[J]. AIP Advances, 035123(2016).

    [18] ZHANG Y, WANG C M, LI Y et al. Enhancing electromechanical properties of CaBi2Nb2O9 thin films grown on Si[J]. Ceramics International, 17928(2016).

    [19] LI Y, HAO Y, JU M et al. Significantly enhanced electrostrain in oriented epitaxial self-assembled Aurivillius-type piezoelectric films via regulating polarization vectors[J]. ACS Applied Materials & Interfaces, 23470(2023).

    [20] ZHANG Y, OUYANG J, ZHANG J et al. Strain engineered CaBi2Nb2O9 thin films with enhanced electrical properties[J]. ACS Applied Materials & Interfaces, 16744(2016).

    [21] LEE H N, HEESSE D, ZAKHAROV N et al. Ferroelectric Bi3.25La0.75Ti3O12 films of uniform a-axis orientation on silicon substrates[J]. Science, 2006(2002).

    [23] CHO H S, DESU S B. Structural and electrical properties of oriented ferroelectric CaBi2Nb2O9 thin films deposited on n+-Si (100) by pulsed laser deposition[J]. Physica Status Solidi Applied Research, 371(1997).

    [24] LI Y, YU Z, FU Z et al. Epitaxial growth mechanism and ferroelectric property of c-oriented bismuth-layered CaBi2Nb2O9 film[J]. Applied Physics Letters, 242901(2023).

    [25] LU C J, QIAO Y, QI Y J et al. Large anisotropy of ferroelectric and dielectric properties for Bi3.15Nd0.85Ti3O12 thin films deposited on Pt/Ti/SiO2/Si[J]. Applied Physics Letters, 222901(2005).

    [26] YAO H J, LI Y, LUO J H et al. Epitaxial growth of perovskite oxide SrTiO3/BaTiO3 multilayer films on SrTiO3 substrate[J]. Journal of Functional Materials, 2890(2004).

    Tools

    Get Citation

    Copy Citation Text

    Guanyuan REN, Yiguan LI, Donghai DING, Ruihong LIANG, Zhiyong ZHOU. CaBi2Nb2O9 Ferroelectric Thin Films: Modulation of Growth Orientation and Properties [J]. Journal of Inorganic Materials, 2024, 39(11): 1228

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Apr. 23, 2024

    Accepted: --

    Published Online: Jan. 21, 2025

    The Author Email: Donghai DING (dingdongxauat@163.com), Zhiyong ZHOU (zyzhou@mail.sic.ac.cn)

    DOI:10.15541/jim20240208

    Topics