Chinese Journal of Lasers, Volume. 29, Issue s1, 167(2002)

Low Threshold Current Density Lasing of InGaAs/AlGaAs Single Quantum Well Laser

NING Yong-qiang1,2, GAO Xin3, LIU Yun1,2, WANG Li-jun1,2, Peter Smowton4, and Peter Blood4
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4Astronomy and Physics Department, Cardiff University, UK
  • show less
    References(4)

    [1] [1] X. He, S. Srinivasan, S. Wilson et al.. 10.9 W continuous wave optical power from 100 μm aperture InGaAs/AIGaAs (915 nm) laser diodes. Electron. Lett., 1998, 34(22):2126~2127

    [2] [2] Ε. J. Wilson, J. J. Lewandowski, Β. K. Nayar et al.. 9. 5 W CW output power from high brightness 980 nm InGaAs/AIGaAs tapered laser arrays. Electron. Lett., 1999, 35(1): 43~44

    [3] [3] J. D. Thomson, H. D. Summers, P. J. Huyler et al.. Determination of single pass optical gain and loss using a multisection device. Appl. Phys. Lett., 1999, 75: 2527~2529

    [4] [4] A. E. Zhukov, V. M. Ustinov, A. Yu. Egorov et al.. Nagative characteristic temperature InGaAs/ AlGaAs quantum dot injection laser. Jpn. J. Appl. Phys., 1997, 36:4216~4218

    Tools

    Get Citation

    Copy Citation Text

    NING Yong-qiang, GAO Xin, LIU Yun, WANG Li-jun, Peter Smowton, Peter Blood. Low Threshold Current Density Lasing of InGaAs/AlGaAs Single Quantum Well Laser[J]. Chinese Journal of Lasers, 2002, 29(s1): 167

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: laser devices and laser physics

    Received: --

    Accepted: --

    Published Online: Feb. 23, 2013

    The Author Email:

    DOI:

    CSTR:32186.14.

    Topics