High Power Laser and Particle Beams, Volume. 35, Issue 9, 096002(2023)
Two-electron resonance absorption model of laser-semiconductor interaction
Fig. 1. Schematic diagram of the principle of two-electron resonance absorption
Fig. 2. Relationship between absorption coefficient and electron temperature with different doping concentrations
Fig. 5. Relationship between equivalent linear energy transfer, excited charge and laser energy
Fig. 6. Corresponding relationship between laser energy and SEU cross section at different temperatures when the doping concentration is 1014 cm−3
Fig. 7. Corresponding relationship between laser energy and SEU cross section at different temperatures when the doping concentration is 1011cm−3
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Kemian Qin, Yuhe Pan, Ya’nan Mao, Heng An, Chenguang Zhang, Jiangtao Zhao, Tieshan Wang, Haibo Peng. Two-electron resonance absorption model of laser-semiconductor interaction[J]. High Power Laser and Particle Beams, 2023, 35(9): 096002
Category: Nuclear Science and Engineering
Received: Nov. 6, 2022
Accepted: Jul. 6, 2023
Published Online: Oct. 17, 2023
The Author Email: Peng Haibo (penghb@lzu.edu.cn)