High Power Laser and Particle Beams, Volume. 35, Issue 9, 096002(2023)

Two-electron resonance absorption model of laser-semiconductor interaction

Kemian Qin1, Yuhe Pan1, Ya’nan Mao1, Heng An2, Chenguang Zhang2, Jiangtao Zhao1, Tieshan Wang1, and Haibo Peng1、*
Author Affiliations
  • 1School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China
  • 2Lanzhou Institute of Physics, Lanzhou 730000, China
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    Figures & Tables(8)
    Schematic diagram of the principle of two-electron resonance absorption
    Relationship between absorption coefficient and electron temperature with different doping concentrations
    Images of spatiotemporal evolution of temperature
    Variation of total excited charge with time
    Relationship between equivalent linear energy transfer, excited charge and laser energy
    Corresponding relationship between laser energy and SEU cross section at different temperatures when the doping concentration is 1014 cm−3
    Corresponding relationship between laser energy and SEU cross section at different temperatures when the doping concentration is 1011cm−3
    • Table 1. Laser parameters used in the simulation

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      Table 1. Laser parameters used in the simulation

      wavelength/nmpulse width/pslaser energy/pJspot diameter/μmabsorption coefficient (intrinsic silicon)/μm−1
      1064255231.60.00143
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    Kemian Qin, Yuhe Pan, Ya’nan Mao, Heng An, Chenguang Zhang, Jiangtao Zhao, Tieshan Wang, Haibo Peng. Two-electron resonance absorption model of laser-semiconductor interaction[J]. High Power Laser and Particle Beams, 2023, 35(9): 096002

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    Paper Information

    Category: Nuclear Science and Engineering

    Received: Nov. 6, 2022

    Accepted: Jul. 6, 2023

    Published Online: Oct. 17, 2023

    The Author Email: Peng Haibo (penghb@lzu.edu.cn)

    DOI:10.11884/HPLPB202335.220376

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