Researching | Lifetime prediction method for high-power laser diodes under double-stress cross-step accelerated degradation test

[1] Chen L H, Yang G W, Liu Y X. Development of semiconductor laser[J]. Chinese Journal of Lasers, 47, 0500001(2020).

[2] Yuan Q H, Jing H Q, Zhang Q Y, . Development and applications of GaAs-based near-infrared high power semiconductor lasers[J]. Laser & Optoelectronics Progress, 56, 040003(2019).

[3] Wang L J, Ning Y Q, Qin L, . Development of high power diode laser[J]. Chinese Journal of Luminescence, 36, 1-19(2015).

[4] Ning Y Q, Chen Y Y, Zhang J, . Brief review of development and techniques for high power semiconductor lasers[J]. Acta Optica Sinica, 41, 0114001(2021).

[5] Wang H W, Teng K N. Review of reliability evaluation technology based on accelerated degradation data[J]. Systems Engineering & Electronics, 39, 2877-2785(2017).

[6] Li B, Wang Z F, Qiu B C, . Analysis on high temperature characteristic of high power semiconductor laser array[J]. Chinese Journal of Luminescence, 41, 1158-1164(2020).

[7] Han J H, Park S W. Wafer level reliability and lifetime analysis of InGaAsP/InP quantum-well Fabry-Perot laser diode[J]. IEEE Transactions on Device and Materials Reliability, 5, 683-687(2005).

[8] Ishikawa H, Fujiwara T, Fujiwara K, et al. Acclerated aging test of Ga_1-xAl_xAs DH lasers[J]. Journal of Applied Physics, 50, 2518-2522(1979).

[9] Tseng S T, Wen Z C. Step-stress accelerated degradation analysis for highly reliable products[J]. Journal of Quality Technology, 32, 209-216(2000).

[10] Yoon S F. Observation of nonbiased degradation recovery in GaInAsP/InP laser diodes[J]. Journal of Lightwave Tech-nology, 10, 194-198(1992).

[11] Sumpf B, Fricke J, Ressel P, et al. 20 000 h reliable operation of 100 μm stripe width 650 nm broad area lasers at more than 1.1 W output power[J]. Semiconductor Science and Technology, 26, 105011(2011).

[12] [12] Wang J , Bao L , Devito M , et al. Reliability perfmance of 808nm single emitter multimode laser diodes [C]Proceedings of SPIE, 2010, 7583: 758305.

[13] [13] Konig H, Gerhard S, Ali M, et al. Blue highpower InGaN semiconduct laser diodes: Design optimization of laser bars single emitters f best perfmance reliability [C]Proceedings of the Conference on HighPower Diode Laser Technology XVIII, San Francisco, CA, Feb 0204, 2020, 11262: 112620Q.

[14] Rong B H, Wang X Y, An Z F, . Accelerated life-time test of high-power laser diode[J]. Semiconductor Technology, 33, 360-362(2008).

[15] Wang D H, L Y J, An Z F. Step-accelerated aging study of high-power semiconductor lasers[J]. Micro and Nano Electronics, 508-511(2008).

[16] Lu G G, Huang Y, Lei Z F. Lifetime evaluation on high power cm-bars[J]. Infrared and Laser Engineering, 41, 2328-2332(2012).

[17] Wang W Z, Jing H Q, Qi Q, . Reliability test and failure analysis of high power semicounductor laser[J]. Chinese Journal of Luminescence, 38, 165-169(2017).

[18] [18] Zhu Jing, Yang Thomas, Zhang Cuipeng, et al. Reliability study of highbrightness multiple single emitter diode lasers [C]Highpower Diode Laser Technology & Applications XIII, 2015, 9348: 93480J.

[19] [19] Zhang H Y, Fan Y, Liu H, et al. Power degradation reliability study of high power laser bars at quasiCW operation[C]Novel Inplane Semiconduct Lasers XVI, 2017, 10123: 101231E,

[20] Nie Z Q, Wang M P, Sun Y B, . Thermally accelerated aging test of conduction-cooled-packaged high power diode laser bar in CW mode[J]. Chinese Journal of Luminescence, 40, 1136-1145(2019).

[21] Peng Bo, Zhang Pu, Chen Tianqi, . Reliability of bonding interface in high power diode lasers[J]. Infrared and Laser Engineering, 47, 1105002(2018).

[22] Qian Yanbin, Feng Shiwei, Ma Xiaoyu, . Thermal characteristic of GaAs-based laser diodes[J]. Infrared and Laser Engineering, 40, 2134-2137(2011).

[23] Wang Y S, Mo Y Q, Zhang C H, . Study on statistical analysis for step-stress accelerated degradation tests with two accelerating stresses models and methods[J]. Acta Arma-mentarii, 30, 451-456(2009).

[24] Mao S S. Acceleration model for accelerated life test[J]. Quality and Reliability, 15-17(2003).

[25] Nie Z Q, Wang M P, Sun Y B, . High power semiconductor laser lifetime prediction and failure analysis based on weibull and log-normal distribution[J]. Infrared and Laser Engi-neering, 48, S105003(2019).

[26] Du Y Q, Wang Z F, Zhang X Y, . Testing characterization and simulating optimization of high-power laser diode array chips[J]. Chinese Journal of Luminescence, 42, 674-681(2021).