Fig. 1. Structural diagrams of mathematical model. (a) Schematic of silicon thin film photodetector; (b) cross-sectional view of mathematical model

Fig. 2. Relationship between light absorption efficiency and wavelength with different thicknesses of anti-reflection film

Fig. 3. Absorption efficiency in substrate as a function of incident angle and wavelength. (a) d=80 nm,P=260 nm; (b) d=80 nm, P=300 nm; (c) d=100 nm, P=110 nm; (d) d=100 nm, P=150 nm

Fig. 4. Variations in absorption efficiency, reflection efficiency, and transmission efficiency with incident angle when d=100 nm and P=110 nm. (a)(c) λ=700 nm; (b)(d) λ=800 nm

Fig. 5. Electric field modulus E distributions of x-z cross section at the angle indicated by each arrow in Fig. 4. (a) (b) Nano-structure; (c)(d) bare silicon