High-repetition-rate and high-power picosecond regenerative amplifier based on a single bulk Nd:GdVO<sub>4</sub> crystal

Jie Guo; Wei Wang; Hua Lin; Xiaoyan Liang

doi:10.1017/hpl.2019.16

High Power Laser Science and Engineering, Volume. 7, Issue 2, 02000e35(2019)

High-repetition-rate and high-power picosecond regenerative amplifier based on a single bulk Nd:GdVO₄ crystal

Jie Guo¹, Wei Wang^1,2, Hua Lin¹, and Xiaoyan Liang^1、†,*

¹State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

show less

Figures & Tables(8)

$Parameter separatrix (colored blue and yellow) and curve of $\text{NRT}^{\text{MAX}}$ (colored bold black). The red star indicates the optimum working point for 100 kHz repetition rate operation.$

Fig. 1. Parameter separatrix (colored blue and yellow) and curve of $\text{NRT}^{\text{MAX}}$ (colored bold black). The red star indicates the optimum working point for 100 kHz repetition rate operation.

Download full size

View in Article

Fig. 2. Schematic of the experimental setup: PP, pulse picker; TFP, thin-film polarizer; FR, Faraday rotator; HWP, half-wave plate; QWP, quarter-wave plate; PC, Pockels cell. The beam inside the RA cavity propagates along the 15 mm long $a$-axis of the Nd:GdVO₄ crystal.

Download full size

View in Article

Fig. 3. CW output power versus absorbed pump power.

Download full size

View in Article

Fig. 4. (a) RA regime output power versus absorbed pump power; (b) the last five intracavity signals of the RA.

Download full size

View in Article

Fig. 5. Intensity autocorrelation traces of the oscillator and RA output.

Download full size

View in Article

Fig. 6. (a) Long-term power stability measurement of the RA output. (b) RA output beam quality.

Download full size

View in Article

Table 1. Basic properties of three Nd-doped single crystals (see Refs. [35–42]).

View table

View in Article

Table 1. Basic properties of three Nd-doped single crystals (see Refs. [35–42]).

Parameter	Nd:YAG	Nd:YVO	Nd:GdVO₄
Pump wavelength (nm)	808 869 885	808 880 888	808 880 888
Emission wavelength (nm)	1064	1064	1063
Emission bandwidth (nm)	0.45	0.8	1.25
Efficient emission cross-section
Efficient emission cross-section	at 1064 nm ($10^{-19}~\text{cm}^{2}$)	2.8	13.5 ($\unicode[STIX]{x1D70B}$)	7.6 ($\unicode[STIX]{x1D70B}$)
6.5 ($\unicode[STIX]{x1D70E}$)	at 1064 nm ($10^{-19}~\text{cm}^{2}$)	2.8	1.2 ($\unicode[STIX]{x1D70E}$)
Upper state lifetime ($\unicode[STIX]{x03BC}\text{s}$)	230	91	90
Nonlinear refractive index
($10^{-16}~\text{cm}^{2}/\text{W}$)	8.1	14.7	12.6
Thermal conductivity at 300 K
Thermal conductivity at 300 K	($\text{W}/\text{mK}$)	14	5.1 (a)	10.1 (a)
5.23 (c)	($\text{W}/\text{mK}$)	14	11.4 (c)
Absorption cross-section at
Absorption cross-section at	808 nm ($10^{-19}~\text{cm}^{2}$)	0.41	2.7 ($\unicode[STIX]{x1D70B}$)	5.2 ($\unicode[STIX]{x1D70B}$)
1.2 ($\unicode[STIX]{x1D70E}$)	808 nm ($10^{-19}~\text{cm}^{2}$)	0.41	1.23 ($\unicode[STIX]{x1D70E}$)
Refractive index at 1064 nm	1.820	2.165 (e)	2.192 (e)
Refractive index at 1064 nm	1.820	1.957 (o)	1.972 (o)

Table 2. Key parameter values for simulation.

View table

View in Article

Table 2. Key parameter values for simulation.

Parameter	Value	Parameter	Value
Stable state small signal
gain $G_{0}$	1.91	Round trip loss $l$	0.04
Emission cross-section		Upper state lifetime
$\unicode[STIX]{x1D70E}$ ($\text{cm}^{2}$)	$7.6\times 10^{-19}$	$T_{1}$ ($\unicode[STIX]{x03BC}\text{s}$)	90

Tools

Get Citation

Copy Citation Text

Jie Guo, Wei Wang, Hua Lin, Xiaoyan Liang. High-repetition-rate and high-power picosecond regenerative amplifier based on a single bulk Nd:GdVO₄ crystal[J]. High Power Laser Science and Engineering, 2019, 7(2): 02000e35

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Research Articles

Received: Jan. 19, 2019

Accepted: Apr. 4, 2019

Published Online: Jun. 24, 2019

The Author Email: Xiaoyan Liang (liangxy@siom.ac.cn)

DOI:10.1017/hpl.2019.16

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology