Influence and Optimization of Interference Effect in GaAs p-i-n Structure on Terahertz Wave Generation

Changming Sun; Qiangshuang Li; Jingyi Wang; Haiwei Du

doi:10.3788/CJL230463

Chinese Journal of Lasers, Volume. 50, Issue 22, 2214001(2023)

Influence and Optimization of Interference Effect in GaAs p-i-n Structure on Terahertz Wave Generation

Changming Sun¹, Qiangshuang Li¹, Jingyi Wang¹, and Haiwei Du^1,2、*

Author Affiliations

¹School of Measuring and Optical Engineering, Nanchang Hangkong University, Nanchang 330063, Jiangxi, China

²Key Laboratory of Nondestructive Testing (Ministry of Education), Nanchang Hangkong University, Nanchang 330063, Jiangxi, China

show less

Abstract Get PDF(in Chinese)

Cited By

Article index updated: Mar. 10, 2025

The article is cited by 1 article(s) CLP online library. (Some content might be in Chinese.)

Tools

Get Citation

Copy Citation Text

Changming Sun, Qiangshuang Li, Jingyi Wang, Haiwei Du. Influence and Optimization of Interference Effect in GaAs p-i-n Structure on Terahertz Wave Generation[J]. Chinese Journal of Lasers, 2023, 50(22): 2214001

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: terahertz technology

Received: Jan. 16, 2023

Accepted: Mar. 15, 2023

Published Online: Nov. 7, 2023

The Author Email: Du Haiwei (haiweidu@nchu.edu.cn)

DOI:10.3788/CJL230463

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology