Optical saturation characteristics of dual- and single-injection Ge-on-Si photodetectors

Jishi Cui; Bowen Bai; Fenghe Yang; Zhiping Zhou

doi:10.3788/COL201816.072502

Chinese Optics Letters, Volume. 16, Issue 7, 072502(2018)

Optical saturation characteristics of dual- and single-injection Ge-on-Si photodetectors

Jishi Cui, Bowen Bai, Fenghe Yang, and Zhiping Zhou^*

State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China

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Jishi Cui, Bowen Bai, Fenghe Yang, Zhiping Zhou, "Optical saturation characteristics of dual- and single-injection Ge-on-Si photodetectors," Chin. Opt. Lett. 16, 072502 (2018)

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Paper Information

Category: Optoelectronics

Received: Mar. 8, 2018

Accepted: May. 21, 2018

Published Online: Jul. 19, 2018

The Author Email: Zhiping Zhou (zjzhou@pku.edu.cn)

DOI:10.3788/COL201816.072502

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology