Photoconduction-Type CdS Detector Irradiated by Two Laser Beams

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Acta Optica Sinica, Volume. 27, Issue 1, 85(2007)

[in Chinese]^*, [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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References(3)

[1] [1] M. Kruer, L. Esterowitz, R. Allen et al.. Thermal models for laser damage in InSb photovoltaic and photoconductive detectors[J]. Infrared Physics, 1976, 16(3): 375～384

[2] [2] M. Lax. Temperature rise induced by a laser beam Ⅱ. The nonlinear case[J]. Appl. Phys. Lett., 1978, 33(8): 786～788

[3] [3] Dae M. Kim, D. L. Kwong. Pulsed laser annealing of single-crystal and ion-implanted semiconductors[J]. IEEE J. Quant. Electron., 1982, QE-18(2): 224～232

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[4] Li Chunxia, Dang Suihu, Zhang Keyan, Tu Linjun. Influence of Pressure Effect on CdS Electronic Structure and Optical Properties[J]. Acta Optica Sinica, 2011, 31(6): 616004

[5] Li Li, Lu Qisheng. Numerical Simulation of Dynamic Response of PC-Type HgCdTe Detector Irradiated by in-Band and Out-of-Band Laser Beams[J]. Acta Optica Sinica, 2008, 28(10): 1952

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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Photoconduction-Type CdS Detector Irradiated by Two Laser Beams[J]. Acta Optica Sinica, 2007, 27(1): 85

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Paper Information

Category: Instrumentation, Measurement and Metrology

Received: Apr. 19, 2006

Accepted: --

Published Online: Jan. 22, 2007

The Author Email: (lilyamon@sina.com)

DOI:

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology